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    IXFH13 Search Results

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    IXFH13 Price and Stock

    Littelfuse Inc IXFH130N15X3

    MOSFET N-CH 150V 130A TO247
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    DigiKey IXFH130N15X3 Tube 341 1
    • 1 $8.05
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    IXYS Corporation IXFH13N50

    MOSFET N-CH 500V 13A TO247AD
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    Onlinecomponents.com IXFH13N50 447
    • 1 $15.26
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    Bristol Electronics IXFH13N50 14 1
    • 1 $9
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    Quest Components IXFH13N50 7
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    IXFH13N50 31
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    IXFH13N50 24
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    ComSIT USA IXFH13N50 60
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    IXYS Corporation IXFH13N80

    MOSFET N-CH 800V 13A TO247AD
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    Quest Components IXFH13N80 7
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    IXYS Corporation IXFH13N90

    MOSFET N-CH 900V 13A TO247AD
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    IXYS Corporation IXFH13N100

    MOSFET N-CH 1000V 12.5A TO247AD
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    IXFH13 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH130N15X3 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    IXFH13N100 IXYS 1000V power MOSFET Original PDF
    IXFH13N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFH13N50 IXYS HiperFET Power MOSFETS Scan PDF
    IXFH13N50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXFH13N65 IXYS HiperFET Power MOSFETS Scan PDF
    IXFH13N80 IXYS N-Channel Enhancement Mode HiPerFET Power MOSFET Original PDF
    IXFH13N80 IXYS 800V HiPerFET power MOSFET Original PDF
    IXFH13N80 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXFH13N80Q IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFH13N90 IXYS 900V HiPerFET power MOSFET Original PDF
    IXFH13N90 IXYS HiperFET Power MOSFETS Scan PDF

    IXFH13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous


    Original     		PDF IXFH13 10N90 12N90 13N90 13N90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous


    Original     		PDF IXFH13

    10N90

    Abstract: 13N90 IXFH13
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous


    Original     		PDF IXFH13 10N90 10Source 10N90 13N90

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    13N50 equivalent

    Abstract: 13N50 IXFH13N50
    Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 13N50 ISOPLUS220TM 728B1 123B1 728B1 065B1 13N50 equivalent 13N50 IXFH13N50

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC13N50 ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on trr = 500 = 12 = 0.4 ≤ 250 V A Ω ns ISOPLUS 220TM Symbol Test Conditions


    Original     		PDF IXFC13N50 ISOPLUS220TM 220TM IXFH13N50 728B1 123B1 728B1 065B1

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH/IXFM10 N90 IXFH/IXFM12 N90 IXFH13N90 N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family Test Conditions Voss Tj = 25°C to 150°C ^ = 25°C to 150°C; RGS = 1 M£2 900 900 V V Continuous Transient ±20 ±30 V V 10


    OCR Scan     		PDF IXFH/IXFM10 IXFH/IXFM12 IXFH13N90 10N90 12N90 13N90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 IXFH13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii


    OCR Scan     		PDF IXFH/IXFM10N100 IXFH/IXFM12 IXFH13N100 10N100 12N100 13N100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET IXFH /IXFM 10 N90 IXFH /IXFM 12 N90 IXFH13N90 Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TestConditions V v DGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V V GS


    OCR Scan     		PDF IXFH13N90 O-247 10N90 12N90 13N90

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


    OCR Scan     		PDF 0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100

    Untitled

    Abstract: No abstract text available
    Text: IXYS HiPerFET Power MOSFETs ^D25 IX F H / IX F M 10 N 1 0 0 1000 V 10 A 1 .2 0 Q IX F H / I X F M 12 N 1 0 0 1000 V 12 A 1 .0 5 Q IX F H 1 3 N 1 0 0 1000 V 1 2 .5 A 0 .9 0 Q N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions


    OCR Scan     		PDF to150 10N100 12N100 13N100 13N100

    ixfh13n50

    Abstract: No abstract text available
    Text: nixYS HiPerFET Power MOSFETs IXFH 13N50 VDSS I D cont P DS(on) = 500 V = 13 A = 0.4 Q <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family $8 Maximum Ratings Symbol Test Conditions V DSS ^ =25°Cto 150°C 500 V v DGR ^ = 25° C to 150° C; RGS= 1 M£2


    OCR Scan     		PDF 13N50 O-247 IXFH13N50 ixfh13n50

    Untitled

    Abstract: No abstract text available
    Text: laixYS HiPerFET Power MOSFETs IXFH 13N80 V DSS I 800 V 13 A = 0.80 Q 025 RDS on N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 68 Symbol Test Conditions V OSS ^ =25°C to150°C 800 V V OCR ^ = 25° C to 150° C; RGS= 1 M il 800 V Vos v GS„


    OCR Scan     		PDF 13N80 to150 O-247AD IXFH13N80

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		PDF IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50

    640 hc v3

    Abstract: 12N90
    Text: lOIXYS HiPerFET Power MOSFETs IXFH /IXFM 10N90 IXFH /IXFM 12N90 IXFH 13N90 p V DSS ^D25 900 V 900 V 900 V 10 A 12 A 13 A DS on 1.1 Q 0.9 £2 0.8 Q t„rr <250 ns High dv/dt, Low trr, HDMOS™ Family OS Symbol Test Conditions V vDGR Tj =25°Cto150°C Tj =25°Cto150°C;RGS= 1 Mi2


    OCR Scan     		PDF 10N90 12N90 13N90 Cto150 640 hc v3