10N90
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
O-204
10N90
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
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12n90c
Abstract: 125OC
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N90C
728B1
123B1
728B1
065B1
12n90c
125OC
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT Lightspeed TM Series Symbol Test Conditions IXGH 12N90C Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM
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12N90C
O-247
728B1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM
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12N90C
O-247
728B1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N90C
O-247
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 900 V VCGR T J = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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12N90C
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12n90
Abstract: 10N90 4048-A
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 10N90 12N90 10 12
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10N90
12N90
12n90
10N90
4048-A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
12N90
O-230
O-220F1
QW-R5020-593
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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12N90C
O-247
O-247
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12N90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
O-220
12N90
O-220F1
QW-R502-593
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
12N90
QW-R5020-593.
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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12N90Q
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12n90q
Abstract: PLUS247
Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 Ω trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS
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12N90Q
PLUS-247
O-268
728B1
123B1
728B1
065B1
12n90q
PLUS247
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
O-220
12N90
O-220F1
QW-R502-593
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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O-247
O-268
12N90Q
12N90Q
O-268AA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
12N90
QW-R5020-593.
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 900 V 900 V 900 V 10 A 12 A 13 A 1.1 Ω 0.9 Ω 0.8 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol Test Conditions
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O-247
10N90
12N90
13N90
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L1047
Abstract: 12N90Q D1488
Text: IZIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 D DS on = 900 V = 12 A = 0.9 Q t rr < 200 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V DSS Td = 25°C to 150°C
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12N90Q
O-247AD
O-268
L1047
D1488
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OV 780
Abstract: No abstract text available
Text: V • » = V = CES sat ^fi(typ) Symbol Test Conditions = CES “ 9 0 0 V 2 4 A V ■ IXGH 12N90C o HiPerFAST IGBT Lightspeed™ Series CO Advanced Technical Information 7 0 n s TO-247 T, = 25°C to 150°C 900 V T J, = 25° C to 150° C;’ ROb„ = 1 Mß
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12N90C
O-247
OV 780
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Untitled
Abstract: No abstract text available
Text: OIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q VDSS IXFT 12N90Q I D25 ^ D S o n N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 900 V = = 12 A 0 .9 Q trr < 200 ns P relim inary d a ta sh e e t Symbol Test Conditions Maximum Ratings
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12N90Q
to150
O-247
O-268
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640 hc v3
Abstract: 12N90
Text: lOIXYS HiPerFET Power MOSFETs IXFH /IXFM 10N90 IXFH /IXFM 12N90 IXFH 13N90 p V DSS ^D25 900 V 900 V 900 V 10 A 12 A 13 A DS on 1.1 Q 0.9 £2 0.8 Q t„rr <250 ns High dv/dt, Low trr, HDMOS™ Family OS Symbol Test Conditions V vDGR Tj =25°Cto150°C Tj =25°Cto150°C;RGS= 1 Mi2
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10N90
12N90
13N90
Cto150
640 hc v3
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Untitled
Abstract: No abstract text available
Text: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V
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12N90
O-247
O-204
O-204
O-247
C2-72
IXTW12N90
C2-73
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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