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    SI4466DY Price and Stock

    Vishay Siliconix SI4466DY-T1-E3

    MOSFET N-CH 20V 9.5A 8SO
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    DigiKey SI4466DY-T1-E3 Reel
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    Bristol Electronics SI4466DY-T1-E3 2,485 7
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    • 10 $0.825
    • 100 $0.3094
    • 1000 $0.231
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    Quest Components SI4466DY-T1-E3 1,988
    • 1 $1.1
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    • 1000 $0.286
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    SI4466DY-T1-E3 589
    • 1 $0.66
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    ES Components SI4466DY-T1-E3
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    Vishay Siliconix SI4466DY-T1-GE3

    MOSFET N-CH 20V 9.5A 8SO
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    DigiKey SI4466DY-T1-GE3 Reel
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    onsemi SI4466DY

    SINGLE N-CH, 2.V G-S RATED - Bulk (Alt: SI4466DY)
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    Avnet Americas SI4466DY Bulk 4 Weeks 1
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    Vishay Intertechnologies SI4466DY-T1-E3

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    Bristol Electronics SI4466DY-T1-E3 13,692
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    SI4466DY-T1-E3 2,032
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    Quest Components SI4466DY-T1-E3 10,839
    • 1 $2.5
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    • 1000 $0.875
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    SI4466DY-T1-E3 2,247
    • 1 $1.5
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    • 1000 $0.6
    • 10000 $0.525
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    SI4466DY-T1-E3 1,625
    • 1 $1.1
    • 10 $1.1
    • 100 $0.55
    • 1000 $0.44
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    Vishay Siliconix SI4466DY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4466DY-T1 4,510 7
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    SI4466DY-T1 6
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    Quest Components SI4466DY-T1 3,608
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $0.286
    • 10000 $0.275
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    SI4466DY-T1 1,993
    • 1 $1.05
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    • 1000 $0.4375
    • 10000 $0.385
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    Velocity Electronics SI4466DY-T1 2,338
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    ES Components SI4466DY-T1 500
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    Find more SI4466DY price and stock on Findchips.com

    SI4466DY Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4466DY Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4466DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4466DY Vishay N-Channel 2.5-V (D-S) MOSFET Original PDF
    SI4466DY_NL Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4466DY SPICE Device Model Vishay N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4466DY-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    SI4466DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original PDF
    SI4466DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original PDF

    SI4466DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4466DY S-54695--Rev. 15-Sep-97

    SI4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)


    Original     		PDF Si4466DY Si4466DY-T1 S-31062--Rev. 26-May-03

    Si4466DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4466DY 17-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4466DY

    Abstract: 70910
    Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4466DY S-60074Rev. 23-Jan-06 70910

    Si4466DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4466DY 18-Jul-08

    Si4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4466DY 18-Jul-08

    SI4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4466DY 08-Apr-05

    SI4466DY-T1-E3

    Abstract: Si4466DY-T1 Si4466DY
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3 6 D


    Original     		PDF Si4466DY Si4466DY-T1 Si4466DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4466DY

    Abstract: A302V
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3 6 D


    Original     		PDF Si4466DY Si4466DY-T1 Si4466DY-T1-E3 18-Jul-08 A302V

    Untitled

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11

    AN609

    Abstract: Si4466DY
    Text: Si4466DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4466DY AN609 01-Sep-05

    SI4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)


    Original     		PDF Si4466DY Si4466DY-T1 08-Apr-05

    Si4466DY-T1-E3

    Abstract: Si4466DY 135-A70
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11 135-A70

    SI4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4466DY S-00652--Rev. 27-Mar-00

    Si4466DY

    Abstract: No abstract text available
    Text: Si4466DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4466DY S-54695--Rev. 15-Sep-97

    Si4466DY

    Abstract: Siliconix The subcircuit model was extracted and optimized
    Text: SPICE Device Model Si4466DY N-Channel 2.5-V G-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4466DY Siliconix The subcircuit model was extracted and optimized

    Si4466DY

    Abstract: Si4466DY-T1-E3 135-A70
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 18-Jul-08 135-A70

    4466 8 pin mosfet pin voltage

    Abstract: MOSFET 4466
    Text: Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF Si4466DY FDS6570A 4466 8 pin mosfet pin voltage MOSFET 4466

    Si4466DY

    Abstract: No abstract text available
    Text: Si4466DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4466DY S-54695--Rev. 15-Sep-97

    MOSFET 4466

    Abstract: FDS6570A Si4466DY 4466 SO-8
    Text: Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF Si4466DY MOSFET 4466 FDS6570A 4466 SO-8

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671