ixfn36n100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V ID25 = 30 A ISOPLUS264TM RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions
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34N100
ISOPLUS264TM
IXFN36N100
728B1
123B1
065B1
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44N80
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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ISOPLUS264TM
44N80
728B1
123B1
728B1
065B1
44N80
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Untitled
Abstract: No abstract text available
Text: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
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60N80P
ISOPLUS264TM
ISOPLUS264
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MOSFET 60n60
Abstract: 60N60 IXFL60N60 Z 728
Text: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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60N60
ISOPLUS264TM
728B1
123B1
728B1
065B1
MOSFET 60n60
IXFL60N60
Z 728
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IXFN39N90
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS on t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions
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39N90
ISOPLUS264TM
IXFN39N90
728B1
123B1
728B1
065B1
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100N50P
Abstract: 100n50 S20NF
Text: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C
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100N50P
ISOPLUS264TM
ISOPLUS264
100N50P
100n50
S20NF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR
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ISOPLUS264TM
IXFL34N100
ISOPLUS264
IXFN36N100
338B2
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IXFL34N100
Abstract: IXFN36N100
Text: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR
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IXFL34N100
ISOPLUS264TM
ISOPLUS264
00A/s
IXFN36N100
338B2
IXFL34N100
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IXGL50N60BD1
Abstract: ixgl50n60
Text: HiPerFASTTM IGBT ISOPLUS264TM IXGL 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS264TM
50N60BD1
IC110
ISOPLUS-264TM
O-26rr
2x61-06A
IXGL50N60BD1
ixgl50n60
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IXFL38N100Q2
Abstract: 38N100 152AA
Text: IXFL38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 29A Ω 280mΩ 300ns ISOPLUS264TM( IXFL) Symbol Test Conditions Maximum Ratings VDSS
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IXFL38N100Q2
300ns
ISOPLUS264TM(
38N100Q2
5-27-08-B
IXFL38N100Q2
38N100
152AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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ISOPLUS264TM
44N80
150unless
728B1
123B1
728B1
065B1
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80S23
Abstract: No abstract text available
Text: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
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82N60P
ISOPLUS264TM
80S23
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60N80P
Abstract: 60N80 IXFL60N80P
Text: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
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60N80P
ISOPLUS264TM
ISOPLUS264
60N80P
60N80
IXFL60N80P
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80N50Q2
Abstract: IXFL80N50Q2
Text: IXFL80N50Q2 HiPerFETTM Power MOSFET Q2-Class Electrically Isolated Tab VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr ISOPLUS264TM( IXFL) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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IXFL80N50Q2
ISOPLUS264TM(
80N50Q2
5-2-08-G
IXFL80N50Q2
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFL38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 29A Ω 280mΩ 300ns ISOPLUS264TM( IXFL) Symbol Test Conditions Maximum Ratings VDSS
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IXFL38N100Q2
300ns
ISOPLUS264TM(
38N100Q2
5-27-08-B
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82N60P
Abstract: uA78 41a 034
Text: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
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82N60P
ISOPLUS264TM
82N60P
uA78
41a 034
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70n60
Abstract: IXFL70N60Q2
Text: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264
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IXFL70N60Q2
250ns
ISOPLUS264
70N60Q2
8-08-A
70n60
IXFL70N60Q2
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44N60
Abstract: IXFN44N60
Text: IXFL 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 600 V 41 A Ω 130 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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44N60
ISOPLUS-264TM
IXFN44N60
728B1
123B1
728B1
065B1
44N60
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES
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IXGB200N60B3
IC110
183ns
PLUS264TM
200N60B3
8-08-A
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38N100Q2
Abstract: No abstract text available
Text: IXFL 38N100Q2 HiPerFETTM Power MOSFETs IXFL 38N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000
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38N100Q2
38N100Q2
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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ISOPLUS-264TM
75N60BU1
728B1
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200n60
Abstract: IXGB200N60B3 200N60B3
Text: IXGB200N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES
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IXGB200N60B3
IC110
183ns
PLUS264TM
200N60B3
8-08-A
200n60
IXGB200N60B3
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80N50Q2
Abstract: IXFL80N50Q2
Text: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N50Q2
405B2
80N50Q2
IXFL80N50Q2
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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