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    50N60BD1 Price and Stock

    IXYS Corporation IXGK50N60BD1

    IGBT 600V 75A 300W TO264AA
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    IXYS Corporation IXGX50N60BD1

    IGBT 600V 75A 300W TO247
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    IXYS Corporation IXSX50N60BD1

    IGBT 600V 75A 300W PLUS247
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    IXYS Corporation IXSK50N60BD1

    IGBT 600V 75A 300W TO264
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    IXYS Corporation IXGR50N60BD1

    IGBT 600V 75A 250W ISOPLUS247
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    50N60BD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N60BD1

    Abstract: 60-06A PLUS247 IXGK50N60BD1
    Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


    Original     		PDF 50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 50N60BD1 O-264 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


    Original     		PDF 50N60BD1 PLUS247 0-06A

    50N60BD1

    Abstract: TO-264 Jedec package outline
    Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


    Original     		PDF 50N60BD1 50N60BD1 O-264 PLUS247 O-247 O-268 temperatur00 0-06A TO-264 Jedec package outline

    50n60

    Abstract: 50N6 2X61 50N60B 50N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 50N60B 50N60BD1 IC110 2x61-06A 50n60 50N6 2X61 50N60B

    IXGL50N60BD1

    Abstract: ixgl50n60
    Text: HiPerFASTTM IGBT ISOPLUS264TM IXGL 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS264TM 50N60BD1 IC110 ISOPLUS-264TM O-26rr 2x61-06A IXGL50N60BD1 ixgl50n60

    50n60

    Abstract: 2X61 50n60b 50N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 120 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF ISOPLUS247TM 50N60B 50N60BD1 IC110 2x61-06A 50n60 2X61 50n60b

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES


    Original     		PDF 50N60BD1 PLUS247 O-264 60-06B

    50N60BD1

    Abstract: 50N6 PLUS247 50n60
    Text: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES


    Original     		PDF 50N60BD1 PLUS247 60-06B 50N60BD1 50N6 PLUS247 50n60

    IXSK50N60BD1

    Abstract: 50N60BD1
    Text: IGBT with Diode ISOPLUS 247TM IXSR 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.5 V = 150 ns Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 247TM 50N60BD1 IXSK50N60BD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 50N60B 50N60BD1 IC110 2x61-06A

    50N60BD1

    Abstract: 50N60B
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF ISOPLUS247TM 50N60B 50N60BD1 IC110 2x61-06A 50N60B

    50n60

    Abstract: No abstract text available
    Text: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES


    Original     		PDF 50N60BD1 50N60BD1 PLUS247 O-264 60-06B 50n60

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


    Original     		PDF PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    2QN60

    Abstract: ixgh 1500
    Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH


    OCR Scan     		PDF T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50