Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    39N90 Search Results

    SF Impression Pixel

    39N90 Price and Stock

    IXYS Corporation IXFE39N90

    MOSFET N-CH 900V 34A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFE39N90 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Mouser Electronics IXFE39N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IXYS Corporation IXFL39N90

    MOSFET N-CH 900V 34A ISOPLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL39N90 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXFN39N90

    MOSFET N-CH 900V 39A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN39N90 Tube 10
    • 1 -
    • 10 $47.01
    • 100 $47.01
    • 1000 $47.01
    • 10000 $47.01
    		Buy Now
    Mouser Electronics IXFN39N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Newark IXFN39N90 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    RAF Electronic Hardware M3039-N-9.0-1.6-7.0

    METRIC SHOULDER WASHERPLAIN NYLO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M3039-N-9.0-1.6-7.0 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Integrated Circuits Division IXFN39N90

    MOSFET MOD.39A 900V N-CH SOT227B HIPERFET CHASSIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFN39N90
    • 1 $58.86252
    • 10 $55.0117
    • 100 $55.0117
    • 1000 $55.0117
    • 10000 $55.0117
    		Get Quote

    39N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900


    Original     		PDF 39N90 IXFN39N90 728B1

    IXFN39N90

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS on t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 39N90 ISOPLUS264TM IXFN39N90 728B1 123B1 728B1 065B1

    IXFN80N50

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 39N90 IXFN80N50 728B1

    IXFN39N90

    Abstract: 39N90
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900


    Original     		PDF 39N90 IXFN39N90 728B1 39N90

    ISOPLUS-227

    Abstract: IXFN39N90
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900


    Original     		PDF 39N90 IXFN39N90 728B1 ISOPLUS-227

    IXFN39N90

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V


    Original     		PDF 39N90 OT-22BLOC, OT-227 IXFN39N90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900


    Original     		PDF 39N90 IXFN80N50 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = = = 900 V 39 A 0.22 Ω trr ≤ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 39N90 125OC

    IXFN39N90

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFN 39N90 VDSS ID25 RDS on trr £ 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900


    Original     		PDF 39N90 OT-227 E153432 IXFN39N90

    39N90

    Abstract: 125OC
    Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = = = 900 V 39 A 0.22 Ω trr ≤ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 39N90 125OC 39N90 125OC

    Untitled

    Abstract: No abstract text available
    Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C 39 A IDM TC= 25°C, pulse width limited by TJM


    Original     		PDF 39N90 OT-227 E153432

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    d2539

    Abstract: lb 1260 IXFN39N90
    Text: □ IX Y S Advanced Technical Information IXFN 39N90 HiPerFET Power MOSFETs Single MOSFET Die VDSS = ^D25 R d ” DS on = 900 V 39 A 0.2 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Symbol TestConditions Maximum Ratings


    OCR Scan     		PDF IXFN39N90 OT-227 E153432 d2539 lb 1260 IXFN39N90

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50