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IXYS Corporation IXFN80N50Q2 MOSFET N-CH 500V 72A SOT227B
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IXYS Corporation IXFB80N50Q2 MOSFET N-CH 500V 80A PLUS264
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DigiKey	IXFB80N50Q2	Tube			300	1 - 10 - 100 - 1000 $18.4375 10000 $18.4375	Buy Now
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IXYS Corporation IXFL80N50Q2 MOSFET N-CH 500V 55A ISOPLUS264
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DigiKey	IXFL80N50Q2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFL80N50Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote

80N50Q2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
80N50Q2 Abstract: 0169E 123B16 Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	80N50Q2 OT-227 E153432 728B1 123B1 728B1 065B1 80N50Q2 0169E 123B16	PDF
80N50Q2 Abstract: 80n5 IXFB 80N50Q2 Text: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N50Q2 264TM 065B1 728B1 123B1 728B1 80N50Q2 80n5 IXFB 80N50Q2	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions	Original	80N50Q2 264TM 728B1 123B1 065B1	PDF
80N50Q2 Abstract: IXFL80N50Q2 Text: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N50Q2 405B2 80N50Q2 IXFL80N50Q2	PDF
80N50Q2 Abstract: 16-20pF Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 80N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = V DSS ID25 = RDS on = ≤ trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	80N50Q2 264TM 728B1 80N50Q2 16-20pF	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	80N50Q2 OT-227 E153432 728B1 123B1 065B1	PDF
IXFN SOT227 Abstract: 80n5 Text: HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions S Maximum Ratings	Original	80N50Q2 OT-227 E153432 IXFN SOT227 80n5	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF