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    Untitled

    Abstract: No abstract text available
    Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5


    Original     		PDF DSEE29-06CC ISOPLUS220TM DS98815 ISOLPLUS220LV 728B1 065B1 123B1

    si6306

    Abstract: DPG30P300PJ
    Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Maximum Ratings


    Original     		PDF DSEE29-06CC ISOPLUS220TM E153432 9-03A 20080317a ISOPLUS220 728B1 065B1 si6306 DPG30P300PJ

    DSEE29-06CC

    Abstract: 486 smps
    Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Symbol Conditions


    Original     		PDF DSEE29-06CC ISOPLUS220TM E153432 9-03A DS98815A ISOPLUS220 728B1 065B1 DSEE29-06CC 486 smps