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    80N085 Search Results

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    80N085 Price and Stock

    IXYS Corporation IXFC80N085

    MOSFET N-CH 85V 80A ISOPLUS220
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    IXYS Corporation IXFH80N085

    MOSFET N-CH 85V 80A TO247AD
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    IXYS Corporation IXFT80N085

    MOSFET N-CH 85V 80A TO268
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    Mouser Electronics IXFT80N085
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    IXYS Corporation IXFN280N085

    MOSFET N-CH 85V 280A SOT-227B
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    IXYS Corporation IXFK180N085

    MOSFET N-CH 85V 180A TO264AA
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    80N085 Datasheets Context Search

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    80N085

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2 80N085

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-247 O-268 O-268

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-268 O-268

    80N085

    Abstract: IXFH80N085 80N08
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-247 80N085 IXFH80N085 80N08

    80N08

    Abstract: 80N085 4800 mosfet
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 11 mΩ Ω Ω 80 A 11 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085 4800 mosfet

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V ID25 = 80 A RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 80N085 O-247 O-268 O-268AA

    80N08

    Abstract: 80N085
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085

    80N08

    Abstract: 80N085
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085

    80N085

    Abstract: 80N08 4800 mosfet mosfet 4800
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 220TM 80N085 80N08 4800 mosfet mosfet 4800

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60