Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    16N60B2 Search Results

    SF Impression Pixel

    16N60B2 Price and Stock

    IXYS Corporation IXGP16N60B2

    IGBT 600V 40A 150W TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP16N60B2 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGA16N60B2

    IGBT 600V 40A 150W TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGA16N60B2 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGH16N60B2D1

    IGBT 600V 40A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH16N60B2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGP16N60B2D1

    IGBT 600V 40A 150W TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP16N60B2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGH16N60B2

    IGBT Transistors 600V 16A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGH16N60B2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    16N60B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16N60B2D

    Abstract: No abstract text available
    Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D

    16N60

    Abstract: IXGC16N60B2D1
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TMA/ 405B2 16N60

    igbt induction cooker

    Abstract: IF110 16N60B2D1 16N60 IXGH 16N60B2D1 IXGH16N60B2D1
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 igbt induction cooker IF110 16N60 IXGH 16N60B2D1 IXGH16N60B2D1

    16N60

    Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TM0 405B2 16N60 16N60B2 16N60B2D E153432

    16N60

    Abstract: igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 16N60 igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B

    16N60B2D1

    Abstract: igbt induction cooker IXG IGBT
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 16N60B2 16N60B2D1 IC110 ID110 16N60B2D1 728B1 123B1 728B1 igbt induction cooker IXG IGBT

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2