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    HY5141 Search Results

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    HY5141 Price and Stock

    SK Hynix Inc HY514100AJ-70

    IC,DRAM,FAST PAGE,4MX1,CMOS,SOJ,26PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY514100AJ-70 6
    • 1 $7.2
    • 10 $3.6
    • 100 $3.6
    • 1000 $3.6
    • 10000 $3.6
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    HYU HY514100AJ70

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    ComSIT USA HY514100AJ70 220
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    HY5141 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY514100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY514100-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514100-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514100AJ Hynix Semiconductor 4Mx1, Fast Page mode Original PDF
    HY514100AT Hynix Semiconductor 4Mx1, Fast Page mode Original PDF

    HY5141 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ PDF

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM584000A HY514100A 22fiF HYM584000AM/ALM acce4000A 1BC03-11-FEB94 0-05M 031MIN. PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT PDF

    hym536810

    Abstract: HYM53
    Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


    OCR Scan     		HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM536400 Series 4M X 36-bit C M O S DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of thirty six HY514100 In 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW tRWU34) PDF

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681 PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi PDF

    Untitled

    Abstract: No abstract text available
    Text: ♦H Y U N D A I HYM536400 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100 in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW 1CE02-10-MAY93 PDF

    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY514100 DDD14Ã 3380i8 1AC01-20-APR93 4L750flfl HY514100J PDF

    HY514100A

    Abstract: HY514100ALT HY514100AJ 4Mx1
    Text: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		HY514100A 128ms HY514100A HY514100ALT HY514100AJ 4Mx1 PDF

    HY5117400B

    Abstract: HY514100A
    Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin PDF

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin PDF

    CX-381

    Abstract: No abstract text available
    Text: -HYUNDAI HY514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		HY514170B 256KX 16-bit 400mil 40pin 40/44pin 825mW CX-381 PDF

    U5SB

    Abstract: 1621-B AY83
    Text: •HYUNDAI SEMICONDUCTOR HYM584000A Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of eight HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		HYM584000A HY514100A HYM584000AM/ALM 1BC03-10-M 005f0 061MAX. U5SB 1621-B AY83 PDF

    HY514100A

    Abstract: 512Kx1+DRAM
    Text: HYUNDAI HY514100A Series SEMICONDUCTOR 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY514100A HY5141OOA 1AC06-20-APR93 HY514100AJ HY514100AU HY51410QAT HY514100ALT 512Kx1+DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514100A 4M x1, F as t Page m ode DESCRIPTION T h is f a m ily is a 4M b it d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s


    OCR Scan     		HY514100A 128ms PDF

    L0138

    Abstract: 512Kx1
    Text: H Y 5 1 4 1 0 0 • H Y U N D A I 4M X S e r ie s 1-bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY514100 HY514100 1ac01-20-may94 Mb75aà QQ023à 4b750flfl L0138 512Kx1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY514100A HY514100A 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM594000 HY514100 22/iF HYM594000M 1BC02-20-MAY93 251MAX. 1BC02-20-M PDF

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY514100A Schot0300 1AC06-30-MAY94 D002U0Q HY514100AJ HY514100AU PDF

    HY5117400C

    Abstract: HY514100A HYM536810E HYM536810EM1 HYM536810EMG1
    Text: HYM536810E M1-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M1-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		HYM536810E 8Mx36 8Mx36-bit HY5117400C HY514100A HYM536810EM1 HYM536810EMG1 72-Pin PDF

    HYM533400

    Abstract: No abstract text available
    Text: HYM533400 M-Series HYUNDAI 4M x 33-bit CMOS DRAM MODULE DESCRIPTION The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each


    OCR Scan     		HYM533400 33-bit HY514100A 22juF HYM533400M/LM HYM533400MG/LMG 1CE11-11-FEB94 PDF

    HYM536410AMG

    Abstract: hym536410am HY5117400A HY514100A
    Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /


    Original     		HYM536410A 4Mx36-bit 36-bit HY5117400A HY514100A HYM536410AM HYM536410AMG 1CE11-10-DEC94 HY5117400A PDF