msm51v17800b
Abstract: MSM51V17800 SOJ28 bsl 100
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0076-17-41
MSM51V17800B/BSL
MSM51V17800B/BSL
152-Word
MSM51V17800B/BSLCMOS2
42CMOS
28SOJ28TSOP
04832ms2
048128msSL
28400milSOJ
msm51v17800b
MSM51V17800
SOJ28
bsl 100
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SOJ28
Abstract: bsl 100 MSM51V16800B
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0074-17-41
MSM51V16800B/BSL
MSM51V16800B/BSL
152-Word
MSM51V16800B/BSLCMOS2
42CMOS
28SOJ28TSOP
09664ms4
096128msSL
28400milSOJ
SOJ28
bsl 100
MSM51V16800B
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17800
Abstract: No abstract text available
Text: GM71V17800C GM71VS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71V S 17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17800C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process
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GM71V17800C
GM71VS17800CL
GM71V
17800C/CL
17800
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HY51VS
Abstract: No abstract text available
Text: HY51V S 16160HG/HGL 1M x 16Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high
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HY51V
16160HG/HGL
16Bit
16160HG/HGL
16bit.
HY51VS
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Untitled
Abstract: No abstract text available
Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
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HY51V
65163HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
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Untitled
Abstract: No abstract text available
Text: HY51V S 16163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be
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HY51V
16163HG/HGL
16Bit
16163HG/HGL
16bit.
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Untitled
Abstract: No abstract text available
Text: SM572013001Q4GU August 1996 Rev 0 SMART Modular Technologies SM572013001Q4GU 8MByte 1M x 72 , 5.0V, CMOS DRAM Module - Buffered General Description Features The SM572013001Q4GU is a high performance, 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, dual-in-line (DIMM)
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SM572013001Q4GU
168-pin,
1Mx16
74ABT16244
74ACT11244)
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Untitled
Abstract: No abstract text available
Text: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM53616100UP3UU
SM53616100UP3UU
64MByte
64-megabyte
72-pin,
SM536161002P3UU
SM536161004P3UU
16Mx1
64MByte
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RS560C
Abstract: RS560 common base amplifier circuit common emitter amplifier
Text: Issued July 1983 004-591 Data Pack J RF amplifier IC RS560C Data Sheet RS stock number 303-214 A high performance low noise RF amplifier i.c. in an 8 pin DIL package. The large number of circuit nodes accessible from the outside of the package affords great flexibility, enabling the operating currents and
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RS560C
RS560C
RS560
common base amplifier circuit
common emitter amplifier
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GM71V64403C
Abstract: GM71VS64403CL
Text: GM71V64403C GM71VS64403CL 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64403C
GM71VS64403CL
GM71V
64403C/CL
64403C/CL-5
64403C/CL-6
GM71V64403C
GM71VS64403CL
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16mx4
Abstract: HY51V64400A
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
10/Sep
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Untitled
Abstract: No abstract text available
Text: GM71V64403C GM71VS64403CL 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64403C
GM71VS64403CL
GM71V
64403C/CL
27scribed
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Untitled
Abstract: No abstract text available
Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64800A
HY51V65800A
128ms
cycle/64ms)
12/Sep
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TSOP 54 PIN
Abstract: No abstract text available
Text: IBM0165160B 4M x 16 DRAM Features • Low Power Dissipation - Active: 504mW/432mW/396mW max - Standby (LVTTL Inputs): 7.2mW (max) - Standby (LVCMOS Inputs): 720mW (max) • 4,194,304 word by 16 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cydes/64ms
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IBM0165160B
cydes/64ms
504mW/432mW/396mW
720mW
TSOP-54
500milx875mil)
110ns
130ns
IBM0165160BT5A
fabricate01
TSOP 54 PIN
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MSM51V17100
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 17I00 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 51V I7100 is OKI's CM O S silicon gate process technology.
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MSM51VI7100
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
A0-A11
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Untitled
Abstract: No abstract text available
Text: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-649A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi H M 51W 16400 Series, H M 51W 17400 Series are CMOS dynamic RAMs organized 4 ,194,304word X 4-bit. They employ the m ost advanced 0.5 Jim CMOS technology for high performance and low
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HM51W16400
HM51W17400
304-word
ADE-203-649A
304word
300-mil
26-pin
ns/70
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S5400A
Abstract: RO3035
Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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V64400A
V65400A
16Mx4,
128ms
cycle/64ms)
S5400A
RO3035
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A6070M
Abstract: 780sa 7805A PI 81V17805 81v17805a
Text: P R E L IM IN A R Y - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V 1 7 8 0 5 A -6 0 /7 0 /6 0 L /7 0 L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,1 52x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V17805A
A6070M
780sa
7805A PI
81V17805
81v17805a
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81v1
Abstract: No abstract text available
Text: PRELIMINARY - - August 1996 Edition 3.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V1 7800A-60/70/60L/70L CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M B81V17800A is a fully decoded CM OS Dynamic RAM DRAM that contains
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800A-60/70/60L/70L
B81V17800A
024-bits
DS05-10169-2E
81v1
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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RT-6
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is
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M5M4V4280J
4718592-BIT
262144-WORD
18-BIT)
18-bit
RT-6
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MSM51V17100
Abstract: 724540
Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
A0-A11
b724240
724540
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TI AIH
Abstract: R 161 730 000
Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.
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MSM51VI7160
576-Word
16-Bit
MSM51V17160
cycles/32ms
TI AIH
R 161 730 000
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STR06
Abstract: No abstract text available
Text: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i
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4194304-BIT
262144-WORD
16-BIT)
16-bit
M5M4V4260J
44P3W-E
STR06
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