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    BUT131 Search Results

    BUT131 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUT131 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131 Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    BUT131 Philips Semiconductors V(cesm): 850V, 80W, silicon diffused power transistor Scan PDF
    BUT131A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131A Philips Semiconductors V(cesm): 1000V, 80W, silicon diffused power transistor Scan PDF
    BUT131H Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131H Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131H Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    BUT131H Philips Semiconductors V(cesm): 850V, 80W, silicon diffused power transistor Scan PDF

    BUT131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUT131H

    Abstract: BUT13
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.


    Original     		PDF BUT131H BUT131H BUT13

    vbe 10v, vce 500v NPN Transistor

    Abstract: npn high voltage transistor 500v 8a vce 500v NPN Transistor BUT131 BUT131A BUT13
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT131/A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min)- BUT131 500V(Min)- BUT131A ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		PDF BUT131/A BUT131 BUT131A vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a vce 500v NPN Transistor BUT131 BUT131A BUT13

    NFE 02 352

    Abstract: 131H BUT131 BUT131A BUT131H L100 82S2 BUT13 BUT31
    Text: [ [ bbS3T31 DEVELOPMENT DATA O G lflflb ? X T h is data sheet contains advance Inform ation and specifications ara subject to change w ith o u t notice. □ • BUT131 SERIES T - 3 3 - / â N AMER PHILIPS/DISCRETE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use


    OCR Scan     		PDF BUT131 O-220 BUT131 NFE 02 352 131H BUT131A BUT131H L100 82S2 BUT13 BUT31

    Untitled

    Abstract: No abstract text available
    Text: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS


    OCR Scan     		PDF BUT131 aTO-220 BUT131 T-33-13

    NFE 02 352

    Abstract: UT131 131H BUT131 BUT131A BUT131H BUT13
    Text: [ bbS3T31 DEVELOPMENT DATA Jl OGlBflb? □ • BUT131 SERIES This data sheet contains advance Information and specifications are subject to change without notice. T - 3 S - / â N AUER PHILIP S /D IS C R E TE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-spaed, glass-passivated npn power transistors in aT O -220 envelope intended for use


    OCR Scan     		PDF BUT131 O-22C) bb53131 T-33-13 NFE 02 352 UT131 131H BUT131A BUT131H BUT13

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


    OCR Scan     		PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A

    ESM40

    Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
    Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc


    OCR Scan     		PDF bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    BUS11A PHILIPS SEMICONDUCTOR

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV


    OCR Scan     		PDF Q01b22Q 32-0t OT-93 BUV90 BUV90F OT-199 ESM3045AV 3045DV ESM4045AV BUS11A PHILIPS SEMICONDUCTOR

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G