Untitled
Abstract: No abstract text available
Text: SAMSUNG SEM IC O N D U C T OR INC "üä 155 KS54AHCT KS74AHCT D E I 7Tb4145 DOQtDlt 1 | B 0 16 D - Dual 2-to-4 Line Decoders/Demultiplexers DESCRIPTION FEATURES • Typical applications: Dual 2-to-4 line decoder Dual 1-to-4 line demultiplexer 3-to-8 line decoder
|
OCR Scan
|
PDF
|
KS54AHCT
KS74AHCT
7Tb4145
7Tb414S
90-XO
14-Pin
|
C1000B
Abstract: 3020C
Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
|
OCR Scan
|
PDF
|
KM416C1000BT
16Bit
1Mx16
7Tb4142
DD3D23b
C1000B
3020C
|
samsung NAND FSR
Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte
|
OCR Scan
|
PDF
|
KM29N16000
KM29N16000
-TSOP2-400F
-TSOP2-400R
samsung NAND FSR
29cd16
NAND IC s
CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR
264Byte
|
16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
|
OCR Scan
|
PDF
|
1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
|
Untitled
Abstract: No abstract text available
Text: K M 4 4 C 1OOOD J CMOS DRAM ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM44C1000DJ
003414b
|
44v100
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10
|
OCR Scan
|
PDF
|
KM44V1000BLL
130ns
KM44V1000BLL-8
150ns
KM44V1000BLL-10
100ns
180ns
KM44V1000BLL-7
cycles/128ms
20-LEAD
44v100
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
|
OCR Scan
|
PDF
|
KM424C257
125ns
28-PIN
0D13625
|
Untitled
Abstract: No abstract text available
Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V
|
OCR Scan
|
PDF
|
SSP4N80A
7Tb4145
004G3Ã
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
|
ksr1012
Abstract: No abstract text available
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kfi) • Complement to KSR1012 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
|
OCR Scan
|
PDF
|
KSR2012
47Kfi)
KSR1012
100/iA,
7Tb4145
ksr1012
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
|
OCR Scan
|
PDF
|
DD131S7
KM41C4000AL
41C4000AL
41C4000AL-
130ns
150ns
100ns
180ns
200ns
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)
|
OCR Scan
|
PDF
|
7Tb414e
KM616513
DG17bE4
KM616513
288-bit
400mil)
|
C48D
Abstract: KM93C46 411E KM93C46I SC46
Text: SAMSUNG ELECTRONICS INC b? E D 71b414S ODlbälb OST SMGK CMOS EEPROM KM93C46 1K Bit Sería! Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating temperature range — KM93C46: Commercial — KM93C46I: Industrial • Single 5 Volt supply • High performance advanced CMOS technology
|
OCR Scan
|
PDF
|
71b414S
KM93C46
KM93C46:
KM93C46I:
250/xA
KM93C46
C48D
411E
KM93C46I
SC46
|
irf9540
Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Text: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times
|
OCR Scan
|
PDF
|
41/y542/9543
IRFP9140/9141
-100V
IRF9541/Ã
RFP9141
IRF9542/IRFP9142
IRF9543/IRFP9143
O-220
irf9540
l 9143
irfp9140
IRFP9143
IRF9540 mosfet
IRF9541
9142
ha 9141
9143
15a 50v p-channel mosfet
|
10DC11
Abstract: No abstract text available
Text: IH S A MSUNG S E M I C ONDUCTOR IN C 05 DEB 7 ^ 4142 0 DD b 5 47 10-Bit Bus Interface Flip-Flops with 3-State Outputs Preliminary Specifications DESCRIPTION FEATURES • Functionally Equivalent to AMD’s Am29821 and Am29822 • Provides Extra Data Width Necessary for Wider Ad’ dressfData Paths or Buses with Parity
|
OCR Scan
|
PDF
|
10-Bit
Am29821
Am29822
54/74ALS
7Tb414S
90-XO
14-Pin
10DC11
|
|
|
SFS9624
Abstract: No abstract text available
Text: SFS9624 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS = -250V
|
OCR Scan
|
PDF
|
SFS9624
-250V
O-220F
00MD007
QD4000Ã
SFS9624
|
A30Z
Abstract: 3224B V256D ttl 74112
Text: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
|
OCR Scan
|
PDF
|
16V256DJ
256Kx16
KM416V256DJ
Q0322bt.
A30Z
3224B
V256D
ttl 74112
|
Untitled
Abstract: No abstract text available
Text: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44V1004DJ
16Mx4,
512Kx8)
7Th4142
D347c
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS
|
OCR Scan
|
PDF
|
KM44C268C
0G15S45
KM44C268C
KM44C268C-6
110ns
KM44C268C-7
130ns
KM44C268C-8
150ns
KM44ress
|
Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM44C4104BK
7Tb4142
0G34bb2
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
|
OCR Scan
|
PDF
|
KM424C257
110ns
130ns
150ns
28-PIN
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
|
OCR Scan
|
PDF
|
KM29N16000ATS/RS
250us
KM29N16000A
Figure14
0Q24234
|
Untitled
Abstract: No abstract text available
Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8
|
OCR Scan
|
PDF
|
KM44C1003C/CL/CSL
KM44C1003C/CIVCSL-5
1003C/CL/CSL-6
110ns
KM44C1003C/CL/CSL-7
130ns
KM44C1003C/CL/CSL-8
150ns
cycle/16m
7TL4142
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
DD147b3
KMM594100N
KMM594100N
KM44C4100J
20-pin
KM41C4000BJ
30-pin
KMM5364100N-6
|
KM44C1000C
Abstract: No abstract text available
Text: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance
|
OCR Scan
|
PDF
|
KM44C1OOOC/CL/CSL
KM44C1000C/CUCSL
KM44C1000C/CL/CSL-5
KM44C1000C/CL/CSL-6
KM44C1000C/CL/CSL-7
130ns
KM44C1000C/CL/CSL-8
150ns
7TL4142
KM44C1000C
|