Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)
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7Tb414e
KM616513
DG17bE4
KM616513
288-bit
400mil)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc
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7Tb414E
KM44C1012A
KM44C1012A-10
130ns
KM44C1012A-8
KM44C1012A-7
150ns
KM44C1012A
180ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E T> • 7Tb414E DD17b05 ÜDH «SflGK KM68V257 CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35 ns (Max.) • Low Power Dissipation Standby (TTL) : 3mA (Max.)
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7Tb414E
DD17b05
KM68V257
KM68V257P/J-20:
KM68V257P/J-25:
KM68V257P/J-35:
KM68V257P:
28-pin
KM68V257J:
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km416c1200j
Abstract: km416c1200 MAS 10 RCD 71FC
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its
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KM416C1200
KM416C1200-7
130ns
KM416C1200-8
150ns
KM416C1200-10
100ns
180ns
cycles/16ms
km416c1200j
MAS 10 RCD
71FC
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452 S77
Abstract: KM64B4002J-10 KM64B4002J-12 KM64B4002J-15 CV448 20/452 S77
Text: PRELIMINARY KM64B4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 0,1 2,15 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A(M ax.) (C M O S ): 3 0 m A(M ax.) O perating K M 6 4 B 40 0 2 J-1 0 : 190 m A(Max.)
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KM64B4002
KM64B4002J-10
KM64B4002J-12
KM64B4002J-15
KM64B4002J:
32-SOJ-4QO
KM64B4002
304-bit
452 S77
KM64B4002J-10
KM64B4002J-12
KM64B4002J-15
CV448
20/452 S77
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Untitled
Abstract: No abstract text available
Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8
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KM48V512A/AL/ALL
KM48V512A/AL/ALL-7
130ns
KM48V512A/AL/ALL-8
150ns
cycle/16ms
cycle/128ms
cycle/128mLA
28-LEAD
71b4142
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rbbb
Abstract: No abstract text available
Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416V254DJ
256Kx16
DQ0-DQ15
rbbb
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.
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KM44C1000AL
KM44C1OOOAL
130ns
OOOAL-10
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41V4000DJ
b414E
7Tb414E
003410b
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)
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KM68B261A
170mA
KM68B261A
144-bit
300mil)
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Untitled
Abstract: No abstract text available
Text: IRLW/I630A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10pA M ax. @ VDS = 200V ^ D S(o n ) =
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IRLW/I630A
7Tb414E
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFP450/451
IRFP450
IRFP451
7Tb414e
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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7Tfcj4142
KMM581000AN
581000AN
81000A
KM44C1OOOAJ
20-pin
30-pin
581000AN-
130ns
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Untitled
Abstract: No abstract text available
Text: IRLS530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS=100V
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IRLS530A
T0-220F
300nF
7Tb4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns
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KM416C256A/AL/ALL
256Kx
110ns
KM416C256A/AÃ
130ns
KM416C256A/AL/ALL-8
150ns
KM416C256A/AUALL-6
40-LEAD
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Untitled
Abstract: No abstract text available
Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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DQ0-DQ15
00303bS
KM416C1200BT
Tb4142
KM416C1200BT)
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KM44C1000
Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Text: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de
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KM44C1000B
KM44C1000B
110ns
KM44C1000B-7
130ns
KM44C1000B-8
150ns
KM44C1000B-6
20-LEAD
KM44C1000
km44c1000bj
KM44C1000BJ6
KM44C1000BP-7
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Untitled
Abstract: No abstract text available
Text: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor
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KA7577
KA7577
Prot05
16-OIP-300A
16-DIP-300B
D32fll2
20-SOP-300
20-SOP-375
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.
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KM416C1200L/LL
KM416C1200L/LL
KM416C1200L/LL-7
130ns
KM416C1200L/LL-8
KM416C1200LVLL-10
100ns
180ns
Dlb432
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS
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KMM372C125AJ
KMM372C125AJ
2Mx72
KMM372C125A
1Mx16bit
400mil
300mil
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Untitled
Abstract: No abstract text available
Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.
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KS9282B
16BIT)
KS9282B
16-Bit
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FSK02
Abstract: 455 khz filter
Text: preliminary FM IF RECEIVER for FLEX PAGER KA8515 INTRODUCTION The KA8515 is designed for FM IF detection in the FLEX pager set. It consists of an oscillator, Mixer, Limiting IF Amp, Quad rature Detector, Regulator, RSSI Received Signal Strength Indicator ,Bit Rate Filter,and a 2-level /4-Level FSK comparator.
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KA8515
KA8515
24-SSOP
500AVrms
TEL-98-P001
FSK01
FSK02
18-S0P-300-AN
FSK02
455 khz filter
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samsung VFD
Abstract: P80-P82 KS57C7002
Text: KS57C7002 ELECTRONICS Microcontroller DESCRIPTION The KS57C7002 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With VFD direct-drive ports, comparator, 8-bit serial I/O interface, 8-bit timer/counter, watchdog timer, and digital I/O, the
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KS57C7002
KS57C7002
16-bit
b4142
44-QFP-1010B
samsung VFD
P80-P82
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