Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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7Tfcj4142
KMM581000AN
581000AN
81000A
KM44C1OOOAJ
20-pin
30-pin
581000AN-
130ns
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22W04
Abstract: KM62256CLG-LV KM62256CLRG-LV KM62256CLTG-LV
Text: KM62256CL-LV CMOS SRAM 32,768 WORD x 8 Bit Extended Voltage OperationCMOS Static RAM FEATURES • Extended Operating Voltage : 3.0-5.5V • Fast Access Time -3.3V Operation : 100ns Max. -5V Operation : 70ns(Max.) • Low Power Dissipation Standby operating
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KM62256CL-
100ns
0mW/35mW
KM62256CLG-LV
28-S0P-450
KM62256CLTG-LV
28-TSOP1-0813
KM62256CLRG
28-TSOP1-Q813
KM62256CL-LV
22W04
KM62256CLG-LV
KM62256CLRG-LV
KM62256CLTG-LV
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Untitled
Abstract: No abstract text available
Text: Preliminary KS16121 DSP for Digital Answering phone with FLASH interface INTRODUCTION KS16121 is a digital signal processor IC that implements all the funct ions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.
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KS16121
KS16121
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