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    7400 SMD Search Results

    7400 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd
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    7400 SMD Price and Stock

    Wima SMDTG02470TB00MQ00

    Film Capacitors 400 .047uF 20% MAX REFLOW 230C
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    Mouser Electronics SMDTG02470TB00MQ00
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    Wima SMDTG02470VA00KR00

    Film Capacitors 400V .047uF 10% MAX REFLOW 230C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDTG02470VA00KR00
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    • 10000 $0.365
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    Wima SMDTG02470TB00JQ00

    Film Capacitors 400V .047uF 5% MAX REFLOW 230C
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    Mouser Electronics SMDTG02470TB00JQ00
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    Wima SMDTG03470YA00MT00

    Film Capacitors 400V .47uF 20% MAX REFLOW 250C
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    Mouser Electronics SMDTG03470YA00MT00
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    Wima SMDTG02470VA00JR00

    Film Capacitors 400V .047uF 5% MAX REFLOW 230C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDTG02470VA00JR00
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    7400 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DigitalTelecom Features Teridian SONET/SDH SMD Transformer for E4, STM-1, STS-3 and OC-3 Applications Turns Ratio LPRI @25°C µH Min Part Number (PRI1:SEC1) 000-7400-30R 1:1CT 36 PRI (Line) • • • • Developed for Teridian’s 78P2352 RoHS compliant versions available


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    78P2352 1500VAC 000-7400-30R PDF

    78P2352

    Abstract: No abstract text available
    Text: DigitalTelecom Features Teridian SONET/SDH SMD Transformer for E4, STM-1, STS-3 and OC-3 Applications Turns Ratio LPRI @25°C Leakage L µH Min (nH Max) Part Number (PRI1:SEC1) 000-7400-30R 1:1CT 15 80 PRI (Line) • • • • Developed for Teridian’s 78P2352


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    78P2352 1500VAC 000-7400-30R PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD NUMERIC DISPLAYS K C S X 56 K C D X 56 Part No. P ackag e Description Material Common Anode Common Cathode KCSA56-101 KCDA56-101 KCSC56-101 KCDC56-101 GaAsP/GaP KCSA56-104 KCDA56-104 KCSC56-104 KCDC56-104 KCSA56-105 KCDA56-105 λ D nm Iv (ucd) @10mA


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    KCSA56-101 KCDA56-101 KCSA56-104 KCDA56-104 KCSA56-105 KCDA56-105 KCSA56-106 KCDA56-106 KCSA56-103 KCDA56-103 PDF

    KPSA56-104

    Abstract: KPSC56-102 KPSA56-121 KPSC56-123 Kingbright KPSC56 ot 3000 smd 123 ot 112 KPDA56-105
    Text: SMD NUMERIC DISPLAYS Kingbright KPSX56 KPDX56 Part No. Package Description Material Common Anode Common Cathode KPSA56-101 KPDA56-101 KPSC56-101 KPDC56-101 GaAsP/GaP KPSA56-104 KPDA56-104 KPSC56-104 KPDC56-104 KPSA56-105 KPDA56-105 λ D nm Iv (ucd) @10mA *20mA


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    KPSX56 KPDX56 KPSA56-101 KPDA56-101 KPSC56-101 KPDC56-101 KPSA56-104 KPDA56-104 KPSC56-104 KPDC56-104 KPSA56-104 KPSC56-102 KPSA56-121 KPSC56-123 Kingbright KPSC56 ot 3000 smd 123 ot 112 KPDA56-105 PDF

    KPCA03-123

    Abstract: ot 112 KPCA03-104 kpdc03-123 KPCC03-112 KPCA03-107 KPCA03-109 KPDA03-101 KPDA03-123 KPSC03-101
    Text: SMD NUMERIC DISPLAYS Kingbright KPSX03 KPDX03 Part No. KPBX03 Package Description Material Common Anode Common Cathode KPSA03-101 KPDA03-101 KPBA03-101 KPCA03-101 KPSC03-101 KPDC03-101 KPBC03-101 KPCC03-101 GaAsP/GaP KPSA03-104 KPDA03-104 KPBA03-104 KPCA03-104


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    KPSX03 KPDX03 KPBX03 KPSA03-101 KPDA03-101 KPBA03-101 KPCA03-101 KPSC03-101 KPDC03-101 KPBC03-101 KPCA03-123 ot 112 KPCA03-104 kpdc03-123 KPCC03-112 KPCA03-107 KPCA03-109 KPDA03-101 KPDA03-123 KPSC03-101 PDF

    smd 7400

    Abstract: ELLATF100N 7400 smd ELLATF470N 5r6 choke dc chopper circuit ELLATF330N marking 221 ELLATF101N ELLATF150N
    Text: Choke Coils Singapore SMD Choke Coils F ELLATF Series: Type: n Features l Magnetic shielded structure l Low DC resistance and capable of corresponding large current l Available on tape and reel for automatic insertion Type ELLATF n Recommended Applications


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    PDF

    Low Pass Filter

    Abstract: MAG.LAYERS LTL LTL-2012-2G4S1-A2 LTL-1608-2G4S1-A3 LTL-2012-5G5S1-A2 LTL-1608-2G4S1-A1
    Text: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低温共烧陶瓷 • Feature 特点 Compact Size 体积小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入 低插入损耗 Low insertion loss, high attenuation.


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    5000MHz 7500MHz 5600MHz 8400MHz Low Pass Filter MAG.LAYERS LTL LTL-2012-2G4S1-A2 LTL-1608-2G4S1-A3 LTL-2012-5G5S1-A2 LTL-1608-2G4S1-A1 PDF

    MAG.LAYERS LTL

    Abstract: 20122G LTL-16 LTL-2012-5G5S1-A2
    Text: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低 温 共 烧 陶瓷 • Feature 特 点 Compact Size 体 积 小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入损 耗 Low insertion loss, high attenuation.


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    5000MHz 7500MHz 5600MHz 8400MHz 11800MHz 17700MHz MAG.LAYERS LTL 20122G LTL-16 LTL-2012-5G5S1-A2 PDF

    mitsubishi 7805

    Abstract: 7805 pi MGF0918A 7805 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


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    MGF0918A MGF0918A 27dBm 150mA 50pcs) d-162 mitsubishi 7805 7805 pi 7805 smd PDF

    MGF0919A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


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    MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs) PDF

    FET K 1358

    Abstract: MGF0916A gp 752 9452 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


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    MGF0916A MGF0916A 23dBm 100mA 50pcs) FET K 1358 gp 752 9452 smd PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


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    MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) PDF

    MGF0920A

    Abstract: IM335 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


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    MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) t-155 IM335 pt 11400 PDF

    SCL 1058

    Abstract: GP145 IDS800 MGF0915A fet GP145 3268
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


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    MGF0915A MGF0915A 23dBm 50pcs) SCL 1058 GP145 IDS800 fet GP145 3268 PDF

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


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    MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113 PDF

    MGF0917A

    Abstract: gp 801 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


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    MGF0917A MGF0917A 24dBm 50pcs) gp 801 pt 11400 PDF

    KCDA02-101

    Abstract: KCSA04-138 KCDA02-105 KCDA03-138 KCSA02-105 KCDA04-104 KCPSA04-102 KCDA02-106 KCSA02-101 KCSA02-106
    Text: P 2-4 SMD NUMERIC DISPLAYS P 5-6 SMD DISPLAY TAPE SPECIFICATIONS P7 RECOMMENDED SOLDERING PATTERN SMD NUMERIC DISPLAYS K C S X 02 K C D X 02 Part No. K C S X 03 P ackag e Description Material Common Anode Common Cathode KCSA02-101 KCDA02-101 KCSC02-101 KCDC02-101


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    KCSA02-101 KCDA02-101 KCSC02-101 KCDC02-101 KCSA02-105 KCDA02-105 KCSC02-105 KCDC02-105 KCSA02-106 KCDA02-106 KCDA02-101 KCSA04-138 KCDA02-105 KCDA03-138 KCSA02-105 KCDA04-104 KCPSA04-102 KCDA02-106 KCSA02-101 KCSA02-106 PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    dc relay economizing coil

    Abstract: contactor 115 volt 400 hz 280 amp 5M65 5M65L vitrohm resistors 1134 scr dc compound wound motor silicon rectifier for exciter S 101 156 924 relay vitrohm rheostat
    Text: Index Description DC Control Page Number Index . J1 146 Field Loss Relay . J2 5 DP Series - General Information . J3


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    PDF

    FET K 1358

    Abstract: 9452 smd MGF0916A fet smd 2657 FET
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


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    MGF0916A MGF0916A 23dBm 100mA 50pcs) June/2004 FET K 1358 9452 smd fet smd 2657 FET PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm


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    MGF0918A MGF0918A 27dBm 150mA 50pcs) PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm


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    MGF0915A MGF0915A 23dBm 800mA 50pcs) PDF

    smd 1PW

    Abstract: IN 5641 A 5641C 5641 PDX56-41 41YW
    Text: Kingbrìght SMD NUMERIC DISPLAYS A PDX56-41 APSX56-41 Part No. Package Description Material X D nm Iv (ucd) @ 10mA *20mA Min. Typ. 625 1200 7400 GaAIAs 640 3000 15500 A P S C 56-41S U R K W A A P D C 56-41S U R K W A InGaAlP 635 4700 17700 A P S A 5 6 -41 S E K W A


    OCR Scan
    APSX56-41 PDX56-41 56-41S A56-41YW smd 1PW IN 5641 A 5641C 5641 PDX56-41 41YW PDF

    Kingbright 7 segment

    Abstract: No abstract text available
    Text: Kingbright SMD NUMERIC DISPLAYS A PSX03-41 A PBX03-41 A PDX03-41 Part No. Package Description Material Common Anode Common Cathode APSA03-41EWA APDA03-41EWA APBA03-41EWA APCA03-41 EWA APSC03-41 EWA APDC03-41 EWA APBC03-41 EWA APCC03-41 EWA GaAsP/GaP APSA03-41SRWA


    OCR Scan
    PSX03-41 PDX03-41 PBX03-41 APSA03-41EWA APDA03-41EWA APBA03-41EWA APCA03-41 APSA03-41SRWA APDA03-41SRWA APBA03-41 Kingbright 7 segment PDF