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    740 MOSFET TRANSISTOR Search Results

    740 MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    740 MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    micro strip line

    Abstract: RD09MUP2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) micro strip line

    2N7526

    Abstract: 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521
    Text: INCH-POUND MIL-PRF-19500/740 13 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F


    Original     		PDF MIL-PRF-19500/740 2N7521U, 2N7522U, 2N7525, 2N7526, MIL-PRF-19500. 2N7521U 2N7522U 2N7525 2N7526 2N7526 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521

    CJ2305

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5


    Original     		PDF OT-23 CJ2305 OT-23 CJ2305

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz)

    MARKING 33A DIODE SOT23

    Abstract: CJ2305 33a sot23 diode CJ230 marking 33a sot23 marking S5 41A SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5


    Original     		PDF OT-23 CJ2305 OT-23 MARKING 33A DIODE SOT23 CJ2305 33a sot23 diode CJ230 marking 33a sot23 marking S5 41A SOT23

    TRANSISTOR D 1765

    Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
    Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) Oct2011 TRANSISTOR D 1765 transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788

    mitsubishi top marking

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) mitsubishi top marking

    RD09MUP2

    Abstract: TRANSISTOR D 1765 720 L 0619 1788
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 720 L 0619 1788

    TRANSISTOR D 1765 320

    Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425

    smd transistor ISS

    Abstract: 40V 60A MOSFET 2SK3813 SMD MU
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SK3813 O-252 smd transistor ISS 40V 60A MOSFET 2SK3813 SMD MU

    Untitled

    Abstract: No abstract text available
    Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU28200M 2-175MHz,

    DU28200M

    Abstract: DU28200
    Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU28200M 2-175MHz, DU28200M DU28200

    2SJ299

    Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


    OCR Scan     		PDF packag45 2SK1910 2SK1911 2SJ293 2SJ294 T0-220FM 2SJ295 2SK1951 2SK1952 2SJ296 2SJ299 mosfet 740 2SJ292 2sj298 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290

    2sk1299

    Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF RD00HVS1 175MHz RD00HVS1 175MHz 25deg

    transistor 16933

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF 25th/Nov. RD01MUS1 520MHz RD01MUS1 520MHz 25deg transistor 16933

    400 watt hf mosfet

    Abstract: 200 watt hf mosfet LF40100M "RF MOSFET" VDD400
    Text: an A M P company RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz LF40100M V2.00 Features • • • • Gold Metallized • Common Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Lower Capacitances for Broadband Linear Operation


    OCR Scan     		PDF LF40100M 120BIAS LF401Ã 45E05 400 watt hf mosfet 200 watt hf mosfet "RF MOSFET" VDD400

    capacitor 50uf

    Abstract: balun 50 ohm DU28200M transistor c s z 44 v
    Text: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices


    OCR Scan     		PDF DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v

    AX1209

    Abstract: LF40100M LF40100
    Text: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for


    OCR Scan     		PDF LF40100M AX1209 LF40100M LF40100

    j 6815 transistor

    Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .


    OCR Scan     		PDF RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor

    25 ohm semirigid

    Abstract: No abstract text available
    Text: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er


    OCR Scan     		PDF UF28100M 303BRANSFORMER. UF201OOM 25 ohm semirigid

    2SJ292

    Abstract: 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 New DIV-L Series 13 • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    LT-85

    Abstract: No abstract text available
    Text: m an A M P com pany RF MOSFET Power Transistor, 40W, 26V 500 -1000 MHz LF2840G V2.00 Features • • • • • N-Channel Enhancem ent Mode Device 40 Watts CW Com m on Source Gemini Configuration RF.SFET Structure Gold Metallization T“ ill D Absolute Maximum Ratings at 25°C


    OCR Scan     		PDF LF2840G b7-17 LT-85