2SK1950 Search Results

2SK1950 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK1950		Hitachi Semiconductor	Mosfet Guide		Original	PDF
2SK1950		Hitachi Semiconductor	Power Transistors Data Book		Scan	PDF
2SK1950		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
2SK1950		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
2SK1950		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
2SK1950L		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF
2SK1950(L)(S)		Unknown	FET Data Book		Scan	PDF
2SK1950S		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF

2SK1950 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hitachi DSA001652 Abstract: No abstract text available Text: 2SK1950 L , 2SK1950(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC - DC converter	Original	2SK1950 D-85622 Hitachi DSA001652	PDF
2SK1950 Abstract: 2SK195 Text: 2SK1950 Silicon N Channel MOS FET Application DPAK–1 High speed power switching 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC	Original	2SK1950 2SK1950 2SK195	PDF
2SK2225 Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent Text: CONTENTS • Index. 4 ■ General Information.	Original	PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent	PDF
Untitled Abstract: No abstract text available Text: 2SK1950 L , 2SK1950(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC - DC converter	OCR Scan	2SK1950 2SK1950Ã	PDF
2SK1950 Abstract: No abstract text available Text: 2SK1950 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2SK1950 2SK1950	PDF
APC UPS es 500 CIRCUIT DIAGRAM Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.	OCR Scan	ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212	PDF
2SK1778 Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.	OCR Scan	high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237	PDF
2sk1058 equivalent Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,	OCR Scan	O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297	PDF
2SJ299 Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290 Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in	OCR Scan	packag45 2SK1910 2SK1911 2SJ293 2SJ294 T0-220FM 2SJ295 2SK1951 2SK1952 2SJ296 2SJ299 mosfet 740 2SJ292 2sj298 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290	PDF
2sk1299 Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298 Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298	PDF
2SK2728 Abstract: 2sk2729 Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929	OCR Scan	2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729	PDF
Hitachi PF0030 Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205 Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m	OCR Scan	303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I Hitachi PF0030 25K1772 2sk1299 2SJ295 PF0042 2SJ299 2sk1205	PDF
PF0040 Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919 Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919	PDF
2SJ292 Abstract: 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290 Text: HITACHI 1.5.4 New DIV-L Series 13 • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290	PDF

2sj177 Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290 Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290	PDF