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    2N7526

    Abstract: 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521
    Text: INCH-POUND MIL-PRF-19500/740 13 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F


    Original     		MIL-PRF-19500/740 2N7521U, 2N7522U, 2N7525, 2N7526, MIL-PRF-19500. 2N7521U 2N7522U 2N7525 2N7526 2N7526 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521 PDF

    2N7550

    Abstract: 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. METRIC MIL-PRF-19500/741A 30 January 2009 SUPERSEDING MIL-PRF-19500/741 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED


    Original     		MIL-PRF-19500/741A MIL-PRF-19500/741 MIL-PRF-19500. 2N7550 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476 PDF