K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
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SKB02N120
40lower
P-TO-263-3-2
O-263AB)
SKB02N120
K02N120
K02N120
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K02N120
Abstract: fast recovery diode 2a trr 200ns
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
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SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
fast recovery diode 2a trr 200ns
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K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation Short circuit withstand time – 10 s
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SKB02N120
PG-TO-263-3-2
K02N120
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Untitled
Abstract: No abstract text available
Text: 1N3879 R THRU 1N3883(R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-400 Volts Types Up to 400V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175
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1N3879
1N3883
1N3880
1N3881
1N3882
1N387
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Untitled
Abstract: No abstract text available
Text: FR6A R 02 THRU FR6J(R)02 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-600 Volts Types Up to 600V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175
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450us
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K02N120
Abstract: fast recovery diode 1a trr 200ns
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:
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SKB02N120
P-TO-220-3-45
SKB02N120
K02N120
fast recovery diode 1a trr 200ns
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K02N120
Abstract: k02n12 SKP02N120
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
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SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
k02n12
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Untitled
Abstract: No abstract text available
Text: FR6A R 05 THRU FR6M(R)05 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-1000 Volts Types Up to 1000V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175
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450us
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SKP02N120
Abstract: 15v 60w smps smps 10w 5V SKB02N120
Text: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter
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SKP02N120
SKB02N120
O-220AB
Q67040-S4278
O-263AB
Q67040-S4279
Mar-00
SKP02N120
15v 60w smps
smps 10w 5V
SKB02N120
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Q67040-S4279
Abstract: FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120
Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKP02N120
SKB02N120
40lower
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
O-220AB
Q67040-S4278
Q67040-S4279
FAST RECOVERY DIODE 200ns
SKB02N120
FAST RECOVERY DIODE 200ns 2a
15v 60w smps
SKP02N120
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k02n120
Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N120
PG-TO-263-3-2
k02n120
PG-TO-263-3-2
SKB02N120
k02n12
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Untitled
Abstract: No abstract text available
Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKP02N120
SKB02N120
SKB02N120
O-220AB
O-263AB
Q67040-S4278
Q67040-S4279
Jan-02
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K02N120
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
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SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
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Untitled
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation Short circuit withstand time – 10 s
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SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
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1200V
Abstract: P-TO220-3-45 K02N120
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:
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SKB02N120
P-TO-220-3-45
SKB02N120
1200V
P-TO220-3-45
K02N120
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Q67040-S4340
Abstract: SKA06N60
Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Aug-00
Q67040-S4340
SKA06N60
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FAST RECOVERY DIODE 200ns 8A 40V
Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Apr-00
FAST RECOVERY DIODE 200ns 8A 40V
6A, 100v fast recovery diode
Q67040-S4340
SKA06N60
200v 1.5v 3a diode
400v 3a low vf diode
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Harris 721
Abstract: RURM1610CC RURM1615CC RURM1620CC
Text: HA RR IS S E M I C Q N D S E C T O R HARRIS S E M I C O N D U C T O R bflE D 4 3 Ü2 27 1 QOJaOHflQ STS • H A S RURM1610CC RURM1615CC, RURM1620CC 16A ,100V - 200V Ultrafast Dual Diodes December 1993 Package Features • ■ JEDEC T 0 -2 0 4 A A BOTTOM VIEW
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RURM1610CC
RURM1615CC,
RURM1620CC
O-204AA
100kHz
RURM1610CC,
RURM1620CC
Harris 721
RURM1610CC
RURM1615CC
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1BH62
Abstract: IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62
Text: p p 9097250 Q 1 » TOSHIBA | N' \ v ^ DDDHEm <DI S C R E TE /O P TO f STANDARD RECTIFIERS _ M D T -O f- 0 / 39C 0 2 2 1 4 p .io ~ p .24_ ~ _ Average Forward Current —» Peak Reverse Voltage 1A 1.2A 1.5A 100V S5277B 1S1885
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S5277B
1S1885
1BZ61
S5277D
1S1886
1DZ61
S5277G
1S1887
1GZ61
S5277J
1BH62
IS1835
1DH62
30JG11
0R06YXZ31
1n61a1
25FXF12
1GH62
toshiba 6jg11
1JH62
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UES1303
Abstract: UESI301 6A, 100v fast recovery diode
Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 High Efficiency, 3.5A DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. FEATURES
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UES1301
BYV28-50
UES1302
BYV28-100
LIES1303
BYV28-150
UES1303
BYV28-50
BYV28-100
UESI301
6A, 100v fast recovery diode
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IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
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1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
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Untitled
Abstract: No abstract text available
Text: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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OCR Scan
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PDF
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UES1301
BYV28-50
UES1302
BYV28-100
UES1303
BYV28-150
UES1301
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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OCR Scan
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PDF
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UES1301
BYV28-50
UES1302
BYV28-100
UES1303
BYV28-150
UES1301
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