K02N120
Abstract: fast recovery diode 1a trr 200ns
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:
|
Original
|
PDF
|
SKB02N120
P-TO-220-3-45
SKB02N120
K02N120
fast recovery diode 1a trr 200ns
|
K02N120
Abstract: k02n12 SKP02N120
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
k02n12
|
K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation Short circuit withstand time – 10 s
|
Original
|
PDF
|
SKB02N120
PG-TO-263-3-2
K02N120
|
K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKB02N120
40lower
P-TO-263-3-2
O-263AB)
SKB02N120
K02N120
K02N120
|
k02n120
Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
k02n120
15v 60w smps
smps 10w 5V
PG-TO-220-3-1
SKP02N120
fast recovery diode 2a trr 200ns
|
K02N120
Abstract: fast recovery diode 2a trr 200ns
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
fast recovery diode 2a trr 200ns
|
1200V
Abstract: P-TO220-3-45 K02N120
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:
|
Original
|
PDF
|
SKB02N120
P-TO-220-3-45
SKB02N120
1200V
P-TO220-3-45
K02N120
|
k02n120
Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
|
Original
|
PDF
|
SKB02N120
PG-TO-263-3-2
k02n120
PG-TO-263-3-2
SKB02N120
k02n12
|
K02N120
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
|
Untitled
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation Short circuit withstand time – 10 s
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
|