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    W60N10

    Abstract: H60N10 w60n max6024
    Text: STH60N1OFI STW60N10 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T H 60N 10 S T H 60N 1OFI STW 60N 10 . m . . . . . . V dss RDS on Id 100 V 100 V 100 V < 0.025 Ì2 < 0.025 Ì2 < 0.025 Ì2 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STH60N1OFI STW60N10 O-247 O-218 ISOWATT218 W60N10 H60N10 w60n max6024

    Untitled

    Abstract: No abstract text available
    Text: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id


    OCR Scan     		PDF 10/FI STH60N1OFI 60N10 7T2T537 04STL STH60N10/FISTW60N10