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    600 SERVO Search Results

    600 SERVO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S589FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver / Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / CLK input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation

    600 SERVO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N60A

    Abstract: 24N60
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


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    PDF 24N60 24N60A O-247 24N60A

    24N60

    Abstract: 24N60A 1365c
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


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    PDF 24N60 24N60A 24N60 24N60A 1365c

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


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    PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    200N60

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 200N60 200N60A OT-227B, T100A

    200n60

    Abstract: ixgn200N60 200N60A IXGN200N60A
    Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 200N60 200N60A OT-227B, 200n60 ixgn200N60 200N60A IXGN200N60A

    30n60b

    Abstract: 30N60 30N60C ic 931
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931

    Untitled

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 30N60B 30N60C O-268

    10N60A

    Abstract: IGBT 10N60 10N60 10N60 e N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


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    PDF 10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient


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    PDF 200N60 200N60A OT-227B,

    24N60

    Abstract: 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous


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    PDF 24N60 24N60A O-247 40N60A 24N60 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4

    RG 290

    Abstract: C110
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


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    PDF ISOPLUS247TM 120N60B RG 290 C110

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600


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    PDF 80N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


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    PDF IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 50N60BD3 OT-227B, 0-06A

    49n6

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 49N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 49N60BD3 OT-227B, 0-06A 49n6

    30N60C

    Abstract: No abstract text available
    Text: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous


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    PDF 30N60B 30N60C Cto150 O-247AD O-268

    Untitled

    Abstract: No abstract text available
    Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous


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    PDF 10N60U1 N60AU1 4bflb22b GD0223Ã 10N60AU1 D94006DE,

    XSH24N60

    Abstract: 24n60
    Text: P IX Y S HiPerFAST IGBT IXSH 24N60 IXSH 24N60A v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V " ces Tj = 25° C to 150° C 600 V VCGR Tj = 2 5°C tO 150°C; RGE= 1 Mi2 600 V vGES


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    PDF 24N60 24N60A O-247 /XSH24N60 24N60A IXSH24N60U1 IXSH24N60AU1 XSH24N60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS V CES HiPerFAST IGBT 600 V 600 V IXSH 24N60 IXSH 24N60A V C25 CE sat 48 A 2.2 V 48 A 2.7 V Short Circuit SOA Capability G_ Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V


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    PDF 24N60 24N60A Collect4N60A 24N60 24N60A 24N60U1 24N60AU1

    24N60AU

    Abstract: ixsh24n60au1 24n60au1 TO-247 weight
    Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V


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    PDF 24N60U1 24N60AU1 IXSH24N60AU1 1999IXYS 24N60AU ixsh24n60au1 TO-247 weight

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode v CES IXSH 10N60U1 IXSH 10N60AU1 "S" Series Improved SCSOA Capability 600 V 600 V Symbol Test Conditions v"CES v CGR T j = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE= 1 M n 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25” C


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    PDF 10N60U1 10N60AU1 10N60AU1

    10N60A

    Abstract: IGBT 10N60 10N6Q
    Text: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s


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    PDF IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q

    n60c

    Abstract: ci lm 317
    Text: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM


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    PDF IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 O-247AD Cto150 O-268 O-264 n60c ci lm 317

    NPN Power Darlington Modules

    Abstract: sk30db semikron SK 300
    Text: se MIKROn Maximum Ratings VcEV Units lc = 1 A, V be = - 2 V 600 V Vbe = - 2 V 600 V 600 V SEMITRANS 2 NPN Power Darlington Modules 30 A, 600 V SK 30 DB 060 D V ebo o II ' VcBO Values o o VcEVsus Conditions m II Symbol 7 V lc D. C. 30 A tp = 1 ms 60 A D. C.


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    PDF h21E2) NPN Power Darlington Modules sk30db semikron SK 300