IXGH39N60B
Abstract: IXGH39N60BS
Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BS VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS
IXGH39N60B
IXGH39N60BS
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH39N60B VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH39N60B
O-247
Internatio19
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH39N60B VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH39N60B
O-247
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IXGH39N60BD1
Abstract: 39N60B 39n60bd1
Text: HiPerFASTTM IGBT IXGH39N60B VCES IXGH39N60BD1 IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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IXGH39N60B
IXGH39N60BD1
O-247
39N60B
39n60bd1
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IXGH39N60BD1
Abstract: IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B
Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
O-268
O-247
IXGH39N60BD1
IXGH39N60B
IXGT39N60B
39n60bd1
M3MD
819 39a
IXGT39N60BD1
39N60B
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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C110
Abstract: IXGH39N60BD1
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ISOPLUS247TM
39N60B
39N60BD1
IXGH39N60BD1
C110
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Untitled
Abstract: No abstract text available
Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90
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IXGH39N60BD1
O-247
125CC,
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J599
Abstract: e5200
Text: DIXYS HiPerFAST IGBT IXGH39N60B V CE sat = 600 V = 76 A = 1.7 V tn = 200 ns CES ^C25 Preliminary data Maximum Ratings Symbol Test Conditions V CES Tj =2 5°C to 150°C 600 V T,J = 25° C to 150° C; Riafc „ =1 600 V V GES Continuous ±20 V VGEM Transient
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IXGH39N60B
TQ-247
100nH
J599
e5200
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32N60BU1
Abstract: 32N60B
Text: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C
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IXGH39N60B
IXGH39N60BS
Cto150Â
O-247
32N60BU1
32N60B
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32N60BU1
Abstract: 32N60B h32n60b e5200 32N60BU
Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS)
32N60BU1
32N60B
h32n60b
e5200
32N60BU
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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IXGN40N60
Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES
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ISOPLUS247TM
O-220
PLUS247TM
O-263
O-268
O-247
ISOPLUS220
O-264
PLUS264TM
IXGA12N100U1*
IXGN40N60
IXGH24N60CD1
IXGR39N60BD1
ixgr32n60cd1
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Untitled
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm
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3S88SSS588S8888gÂ
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Ixgr50n60
Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)
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O-263
PLUS247TM
O-247
IXGH28N60B
IXGH31N60
O-268AA
O-204
lSOPLUS247TM
OT-227B
IXGA20N120
Ixgr50n60
IXGN60N60
IXGX120N60B
ISOPLUS247TM
IXGR40N60
IXGH60N60
ixgh32n170
ixgh35n120
IXGA20N60B
IXGP12N60C
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