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onsemi HGTG40N60A4 IGBT 600V 75A TO247-3
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DigiKey	HGTG40N60A4	Tube			450	1 - 10 - 100 - 1000 $6.10727 10000 $6.10727	Buy Now
	HGTG40N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	HGTG40N60A4	Bulk			450	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	HGTG40N60A4		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	HGTG40N60A4		90		1	1 - 10 - 100 $7.44 1000 $7.44 10000 $7.44	Buy Now
onsemi SHGTG40N60A4 SHGTG40N60A4
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DigiKey	SHGTG40N60A4	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGT1N40N60A4D IGBT MOD 600V 110A 298W SOT227B
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DigiKey	HGT1N40N60A4D	Tube			60	1 - 10 - 100 $20.975 1000 $20.975 10000 $20.975	Buy Now
Fairchild Semiconductor Corporation HGTG40N60A4 Electronic Component
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ComSIT USA	HGTG40N60A4		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	HGTG40N60A4		18,265			1 - 10 - 100 $2.022 1000 $1.696 10000 $1.696	Buy Now

40N60A4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: 40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347	PDF
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: 40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The 40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347	PDF
40N60A4D Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26 Text: 40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D TA49347 40N60A4 MOSFET 40A 600V LD26	PDF
mj 1504 transistor equivalent Abstract: 40N60A4D mj 1504 transistor HGT1N40N60A4D LD26 SOT227B package 40N60A4 TRANSISTOR mosfet 40A transistor mj 1504 Text: 40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input	Original	HGT1N40N60A4D HGT1N40N60A4D 150oC. 100kHz mj 1504 transistor equivalent 40N60A4D mj 1504 transistor LD26 SOT227B package 40N60A4 TRANSISTOR mosfet 40A transistor mj 1504	PDF
mj 1504 transistor equivalent Abstract: mj 1504 transistor transistor mj 1504 40N60A4 40N60A4D mj 1504 transistor datasheet Text: 40N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the	Original	HGT1N40N60A4D HGT1N40N60A4D 150oC. TA49349. 100kHz mj 1504 transistor equivalent mj 1504 transistor transistor mj 1504 40N60A4 40N60A4D mj 1504 transistor datasheet	PDF
40N60A4 Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST Text: 40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4 40N60A4D MOSFET 40A 600V LD26 TA49347 40N60A TO-247ST	PDF
HGTG40N60A4 Abstract: IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: 40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The 40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
40N60A4D Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 Text: 40N60A4D / 40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 40N60A4D and 40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These	Original	HGT5A40N60A4D HGT1Y40N60A4D HGT1Y40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D 40N60A4 HGTG*N60A4D 40N60A MOSFET 40A 600V LD26 TA49347	PDF
mj 1504 transistor equivalent Abstract: 40N60A4D transistor mj 1504 mj 1504 transistor 40N60A4 HGT1N40N60A4D tsc 429 transistors mj 1504 LD26 of mj 1504 transistor Text: 40N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the	Original	HGT1N40N60A4D HGT1N40N60A4D 150oC. 100kHz mj 1504 transistor equivalent 40N60A4D transistor mj 1504 mj 1504 transistor 40N60A4 tsc 429 transistors mj 1504 LD26 of mj 1504 transistor	PDF
40N60A4 Abstract: HGTG40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26 Text: 40N60A4 Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26	PDF
40N60A4D Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347 Text: 40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 40N60A4D DIODE 809 200A 40N60A4 Capacitor 400v 80A TA49347	PDF