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    IXGN200N60 Search Results

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    IXGN200N60 Price and Stock

    IXYS Corporation IXGN200N60B3

    IGBT MOD 600V 300A 830W SOT227B
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    DigiKey IXGN200N60B3 Tube 720 1
    • 1 $56.6
    • 10 $43.054
    • 100 $41.196
    • 1000 $41.196
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    Mouser Electronics IXGN200N60B3 289
    • 1 $54.91
    • 10 $49.92
    • 100 $44.93
    • 1000 $44.93
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    Newark IXGN200N60B3 Bulk 1
    • 1 $45.21
    • 10 $42.18
    • 100 $36.62
    • 1000 $36.62
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    TTI IXGN200N60B3 Tube 60 10
    • 1 -
    • 10 $44.37
    • 100 $44.37
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    TME IXGN200N60B3 1
    • 1 $48.5
    • 10 $38.56
    • 100 $38.56
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    IXYS Corporation IXGN200N60

    IGBT MOD 600V 200A 600W SOT227B
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    IXYS Corporation IXGN200N60B

    IGBT MOD 600V 200A 600W SOT227B
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    IXYS Corporation IXGN200N60A

    IGBT MOD 600V 200A 600W SOT227B
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    IXYS Corporation IXGN200N60A2

    IGBT MOD 600V 200A 700W SOT227B
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    Quest Components IXGN200N60A2 6
    • 1 $105.0322
    • 10 $94.529
    • 100 $94.529
    • 1000 $94.529
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    Find more IXGN200N60 price and stock on Findchips.com

    IXGN200N60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGN200N60 IXYS HiPerFAST IGBT Original PDF
    IXGN200N60A IXYS TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B Original PDF
    IXGN200N60A2 IXYS IGBT Discretes: Low Saturation Voltage Types Single IGBT Original PDF
    IXGN200N60B IXYS TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B Original PDF
    IXGN200N60B IXYS HiPerFASTTM IGBT Original PDF
    IXGN200N60B3 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 300A 600V SOT-227B Original PDF
    IXGN200N60N IXYS 600V HiPerFAST IGBT Original PDF

    IXGN200N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGN200N60B3

    Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
    Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16

    Untitled

    Abstract: No abstract text available
    Text: VCES = 600V IC110 = 200A VCE sat ≤ 1.50V IXGN200N60B3 GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A

    200N60B3

    Abstract: IXGN200N60B
    Text: Preliminary Technical Information VCES = 600V IC110 = 200A VCE sat ≤ 1.5V IXGN200N60B3 GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs for 5-40kHz switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient


    Original     		PDF 200N60 200N60A OT-227B,

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 200N60B 160ns 227TM IXGN200N60B 405B2

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    200N60B

    Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
    Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 200N60B 160ns 227TM IXGN200N60B 405B2 200N60B 200n60 SOT227B package SOT227B 123B16

    200N60

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 200N60 200N60A OT-227B, T100A

    200n60

    Abstract: ixgn200N60 200N60A IXGN200N60A
    Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 200N60 200N60A OT-227B, 200n60 ixgn200N60 200N60A IXGN200N60A

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		PDF IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C