UL1577
Abstract: G3VM-VF
Text: Back G3VM-V MOS FET Relay G3VM Low-cost Series with 6-pin Construction Ideal for minute-signal scanning circuits and subscriber circuits of digital exchange systems. Both DIP and SMD constructions available. Approved Standards: UL1577 Ordering Information
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UL1577
UL1577
G3VM-VF
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bt 1696
Abstract: transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.
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MGF0805A
MGF0805A,
bt 1696
transistor z14 smd
transistor z15 smd
z14 smd
Z25 SMD
MGF0805A
BT 1610 circuit
smd z13
fet smd
transistor SMD Z27
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smd z13
Abstract: of bt 1696 Z12 SMD
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.
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MGF0805A
MGF0805A,
smd z13
of bt 1696
Z12 SMD
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s band
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
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MGF0952P
MGF0952P
15GHz
25dBm
15GHz
700mA
s band
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12W SMD
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
12W SMD
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uhf 1kw amplifier
Abstract: MGF0916A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0916A
MGF0916A
23dBm
100mA
uhf 1kw amplifier
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HS4424B
Abstract: 5962f0052101qxc IS1715 Rad Hard in MOSFET 9v smd transistor
Text: IS-1715ARH TM Data Sheet August 2000 Radiation Hardened Complementary Switch FET Driver File Number 4875 Features • Electrically Screened to SMD # 5962-00521 The Radiation Hardened IS1715ARH is a high speed, high current complementary power FET driver designed for use in
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IS-1715ARH
IS1715ARH
MIL-PRF-38535
3x105
IS-1715ARH
HS-4423RH
HS-4424BRH
HS-4424RH
HS4424B
5962f0052101qxc
IS1715
Rad Hard in MOSFET
9v smd transistor
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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KGF2236
Abstract: k2236 J0124 16PSSOP TA 8644 12943
Text: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
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E2Q0056-18-73
KGF2236
KGF2236,
KGF2236
100000pF
k2236
J0124
16PSSOP
TA 8644
12943
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nxp pmgd780sn
Abstract: PMGD780SN
Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMGD780SN
OT363
SC-88)
PMGD780SN
nxp pmgd780sn
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26mhz 6pin
Abstract: FET probe
Text: Temperature Compensated Crystal Oscillators Dual Output TCXO Surface Mount Type TCXO (LSI Type) KT2016M Series 2.0x1.6mm Features RoHS Compliant • Miniature SMD type (2.0×1.6×0.8mm) • Reflow compatible • AFC function available • 1.68 to 3.45V drive available
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KT2016M
52MHz
26MHz
26mhz 6pin
FET probe
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MGF0805A
Abstract: MITSUBISHI example s band
Text: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.)
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MGF0805A
MGF0805A,
400mA
MGF0805A
MITSUBISHI example
s band
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MGF0919A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
June/2004
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MGF0919A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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mitsubishi 7805
Abstract: MGF0918A 14007
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
June/2004
mitsubishi 7805
14007
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MGF0917A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
June/2004
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MGF0920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
June/2004
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MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
Unit39
50ohm
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
June/2004
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9452 smd
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
50pcs)
9452 smd
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0918A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=27dBm TYP. @ f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
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