56360A
Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Text: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c
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56264a
56264b
56295a
56295b
56295c
56359b
56359c
56359d
56360a
56368b
TO220 washer rectangular
56379
56369
56364
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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1N3889
1N3893
T-03-l
1N3889,
1N3890,
1N3891,
1N3892
1N3893.
1N3890
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PHILIPS BYX50-200
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:
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bb53T31
BYX50
BYX50â
bbS3T31
0010S5S
tt53T31
PHILIPS BYX50-200
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
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BYV21
T-03-19
BYV21-40A,
LLS3T31
bb53T31
001137b
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery
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002244S
BYR30
BYR30-500
0DEEM51
0D22452
T-03-17
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Untitled
Abstract: No abstract text available
Text: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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QD2554S
BVV31
E3YV31
T-03-I9
LbS3T31
BYV31
00225S2
T-03-19
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ALP-51
Abstract: BYR30-500 BYR30-600 BYR30-600U
Text: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery
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bs3ci31
BYR30
BYR30-500
T-03-17
M3085
M3086
M1245
ALP-51
BYR30-600
BYR30-600U
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m2131
Abstract: BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31
Text: SSE D N AMER PHILIPS/DISCRETE • 1^53=131 QG2554S 1 ■ BVV31 SERIES T 0 3 -/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
BYV31â
005SSS1
M2132
E3YV31
G022SSa
T-03-19
M2135
M2136
m2131
BYV31-500
BYV31-500U
m1529
BYV31-300
m1246
diodes byv31
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M3163
Abstract: M3162
Text: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,
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BYV121
711Dfl2t
T-03-17
711002b
0D41S03
D8493
M3163
M3162
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triac btw43
Abstract: BTW43-600 induction furnace induction furnace currents btw43 BTW43-600H M2369 M2631 BTW43-600G triac D 982
Text: PHILIPS INTERNATIONAL bSE D • 711DÖ2b 00L.243S T4b ■ PHIN L BTW43 SERIES TRIACS Glass-passivated silicon triacs in metal envelopes, intended fo r industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used fo r
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711002b
BTW43
btw43-600
triac btw43
induction furnace
induction furnace currents
BTW43-600H
M2369
M2631
BTW43-600G
triac D 982
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byv31
Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Text: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
004135D
T-03-l
BYV31â
M2133
M2132
M2130
m2131
BYV31-500
BYV31-500U
2521a
BYV31-300
M2130
56295b
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Untitled
Abstract: No abstract text available
Text: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for
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Q011T47?
BTW43-600
bbS3131
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Untitled
Abstract: No abstract text available
Text: J _L N AMER PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 1 7 m 2 • 1N 3879l o ~ 1N 3883 ^ JVT-Q3-I7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO—4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
3879l
1N3879
1N3880
1N3881
1N3882
1N3883.
1N3879
1N3880
1N3881
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BYX50-200
Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Text: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:
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0010S20
BYX50
T-03-/7
BYX50-200,
BYX50-
10-dE
b53T31
BYX50-200
PHILIPS BYX50-200
ALPS 102
IEC134
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m3171
Abstract: BYV120-35M BVV120 BYV120 BYV120-35 M3170
Text: ~ N AMER PH IL IP S /D ISC RE TE SSE [ I bbS3T31 D QGSSbô3 T • BYV120 SERIES T -Ô Z -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in
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bbS3T31
00S2bÃ
BYV120
BVV120â
bb53T31
T-03-17
M3172
M80-1070/7
m3171
BYV120-35M
BVV120
BYV120-35
M3170
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1N3893
Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Text: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.
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1N3889
1N3893
T-03-I7
1N3889,
1N3890,
1N3891,
1N3892
1N3893.
1N3890
1N3893
ds662
c738
1N3891
56295A
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56360A
Abstract: 56359D
Text: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.
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O-220
O-220
56264a
56264b
56264a.
56264a
56264b
56360A
56359D
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Untitled
Abstract: No abstract text available
Text: ' N AnER P H IL IP S /D IS C R E T E 25E ' [I ^ 5 3 ^ 3 1 D 0022^63 T • BYV120 SERIES J T -0 Z -I7 v. SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended for use in
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BYV120
T-03-17
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56295A
Abstract: 1N3889 1N3890 1N3891 1N3892 1N3893 IEC134 C738
Text: N AMER PHILIPS/DISCRETE tbS3T31 0G11715 fl □ LE D 1N3889 to 1N3893 T ~ 0 3 - 17 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.
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1N3889
1N3893
T-03-17
1N3889,
1N3890
1N3891,
1N3892
1N3893.
56295A
1N3891
IEC134
C738
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ajs 75-7
Abstract: M3168 M3170 56295B
Text: BYV120 SERIES T-OJ-17 _ PHILIPS INTERNATIONAL SbE J> I 711002b 0041400 ST7 « P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in
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BYV120
T-OJ-17
711002b
BYV120-
QQ414C
M3170
T-03-17
ajs 75-7
M3168
M3170
56295B
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BTW43
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 711üö2b ÜGbS43S T4b ■ P H I N BTW43 SERIES TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable for static switching of 3-phase induction motors. They may also be used for
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GbS43S
BTW43
Q0b243^
DDb544D
711Qfl2fc.
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bvr3
Abstract: BYR30-500 BYR30-600 BYR30-600U
Text: SbE 711DÛEL D DOmSSD 7T7 MPHIN BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES *7 Glass-passivated, high-efftciency epitaxial rectifie r diodes in DO-4 metal envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery
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BYR30
T-03-J
BYR30-500
711002b
T-03-17
M3085
M1245
bvr3
BYR30-600
BYR30-600U
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 □□27370 310 H A P X L BTW 43 SERIES TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable for static switching of 3-phase induction motors. They may also be used for
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bbS3T31
BTW43-600
on-sbb53T31
bb53T31
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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