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    Greenlee Textron Inc 56295 (ALTERNATE: 52049403)

    Hose Assembly, Twin W/Cover | Greenlee 56295
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    56295A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    56295A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    56295A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    56360A

    Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
    Text: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c


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    PDF 56264a 56264b 56295a 56295b 56295c 56359b 56359c 56359d 56360a 56368b TO220 washer rectangular 56379 56369 56364

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.


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    PDF 1N3889 1N3893 T-03-l 1N3889, 1N3890, 1N3891, 1N3892 1N3893. 1N3890

    PHILIPS BYX50-200

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:


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    PDF bb53T31 BYX50 BYX50â bbS3T31 0010S5S tt53T31 PHILIPS BYX50-200

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are


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    PDF BYV21 T-03-19 BYV21-40A, LLS3T31 bb53T31 001137b

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


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    PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery


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    PDF 002244S BYR30 BYR30-500 0DEEM51 0D22452 T-03-17

    Untitled

    Abstract: No abstract text available
    Text: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    PDF QD2554S BVV31 E3YV31 T-03-I9 LbS3T31 BYV31 00225S2 T-03-19

    ALP-51

    Abstract: BYR30-500 BYR30-600 BYR30-600U
    Text: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery


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    PDF bs3ci31 BYR30 BYR30-500 T-03-17 M3085 M3086 M1245 ALP-51 BYR30-600 BYR30-600U

    m2131

    Abstract: BYV31-500 BYV31-500U S 0319
    Text: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd


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    PDF 00225MS ABYV31 -roz-13 BYV31â m2133 BYV31 T-03-19 m2132 m2131 BYV31-500 BYV31-500U S 0319

    m2131

    Abstract: BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31
    Text: SSE D N AMER PHILIPS/DISCRETE • 1^53=131 QG2554S 1 ■ BVV31 SERIES T 0 3 -/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    PDF BYV31 BYV31â 005SSS1 M2132 E3YV31 G022SSa T-03-19 M2135 M2136 m2131 BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31

    m3165

    Abstract: No abstract text available
    Text: BYV121 SERIES _ / v_ SCHO TTK Y-B A R RIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , low capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T he y are intended f o r use in


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    PDF BYV121 M3165 m3165

    pby 345

    Abstract: BYW93 pbyr BYX56 56360A BYW31
    Text: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series


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    PDF BR210 BR211 BR213 BR216 BR220 BYV92 BYV118F BYV121 BYV133 BYV133F pby 345 BYW93 pbyr BYX56 56360A BYW31

    M3163

    Abstract: M3162
    Text: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,


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    PDF BYV121 711Dfl2t T-03-17 711002b 0D41S03 D8493 M3163 M3162

    Untitled

    Abstract: No abstract text available
    Text: BYV31 SERIES SbE D PHILIPS INTERNATIONAL • 7110fl2b D D m B S D bflfl ■ P H I N r - o 3 ~ i ci ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    PDF BYV31 7110fl2b T-03-19

    byv31

    Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
    Text: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    PDF BYV31 004135D T-03-l BYV31â M2133 M2132 M2130 m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b

    Untitled

    Abstract: No abstract text available
    Text: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for


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    PDF Q011T47? BTW43-600 bbS3131

    Untitled

    Abstract: No abstract text available
    Text: J _L N AMER PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 1 7 m 2 • 1N 3879l o ~ 1N 3883 ^ JVT-Q3-I7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO—4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.


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    PDF bbS3T31 3879l 1N3879 1N3880 1N3881 1N3882 1N3883. 1N3879 1N3880 1N3881

    BYX50-200

    Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
    Text: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:


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    PDF 0010S20 BYX50 T-03-/7 BYX50-200, BYX50- 10-dE b53T31 BYX50-200 PHILIPS BYX50-200 ALPS 102 IEC134

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    m3171

    Abstract: BYV120-35M BVV120 BYV120 BYV120-35 M3170
    Text: ~ N AMER PH IL IP S /D ISC RE TE SSE [ I bbS3T31 D QGSSbô3 T • BYV120 SERIES T -Ô Z -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in


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    PDF bbS3T31 00S2bà BYV120 BVV120â bb53T31 T-03-17 M3172 M80-1070/7 m3171 BYV120-35M BVV120 BYV120-35 M3170

    1N3893

    Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
    Text: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.


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    PDF 1N3889 1N3893 T-03-I7 1N3889, 1N3890, 1N3891, 1N3892 1N3893. 1N3890 1N3893 ds662 c738 1N3891 56295A

    Untitled

    Abstract: No abstract text available
    Text: BYV120 SERIES y V- SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , lo w capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T h e y are intended fo r use in


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    PDF BYV120

    56360A

    Abstract: 56359D
    Text: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.


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    PDF O-220 O-220 56264a 56264b 56264a. 56264a 56264b 56360A 56359D

    Untitled

    Abstract: No abstract text available
    Text: ' N AnER P H IL IP S /D IS C R E T E 25E ' [I ^ 5 3 ^ 3 1 D 0022^63 T • BYV120 SERIES J T -0 Z -I7 v. SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended for use in


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    PDF BYV120 T-03-17