Untitled
Abstract: No abstract text available
Text: O K I Semiconductor E 2 G 0 0 8 5 -1 7 -4 1 M SM 51V16165B/BSL_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V16165B/BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51VI6165B/ BSL achieves high integration, high-speed operation, and
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51V16165B/BSL_
576-Word
16-Bit
MSM51V16165B/BSL
MSM51VI6165B/
42-pin
50/44-pin
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MSM51V16160DSL
Abstract: No abstract text available
Text: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM 51V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. The 51V16160D / DSL achieves high integration, high-speed operation,
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E2G0130-17-61
MSM51VI6160P/PSL
576-Word
16-Bit
MSM51V16160D/DSL
heMSM51V16160D/DSLachieveshighintegration
42-pin
MSM51V16160DSL
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Untitled
Abstract: No abstract text available
Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )
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51V16160A
51V18160A
116160A
118160A
256Kx4
514260B/BSL
514256C/CL
51V6800A
51V16100A
51V17100A
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Untitled
Abstract: No abstract text available
Text: E2G0132-17-61 O K I Semiconductor This version: Mar. 1998 M S M 5 1V 1 6 1 6 5 D /D SL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V16165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The 51V16165D / DSL achieves high integration, high-speed operation,
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E2G0132-17-61
576-Word
16-Bit
MSM51V16165D/DSL
MSM51V16165D
42-pin
/44-pin
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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OKI MSM 505
Abstract: 51V16160
Text: O K I Semiconductor 51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V16160A is
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MSM51V16160A
576-Word
16-Bit
MSM51V16160A
42-pin
50/44-pin
OKI MSM 505
51V16160
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ATI Rage IIC
Abstract: No abstract text available
Text: INTEG R ATED T O SH IB A M O S D IG ITAL INTEG RATED CIRCUIT CIRCUIT 51V16165 G / C F T - 60 T O S H IB A TECHNICAL DATA COPY SILICON G ATE C M O S TENTATIVE D A T A 1,048,576 W O R D x 16 BIT ED O HYPER PAGE D Y N A M IC R A M DESCRIPTION The 51V16165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,043,576 words by 16 bits.
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TC51V16165
TC51V16165CJ/CFT
73MAX
KJ-07
ATI Rage IIC
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the 51V16160 is OKI's CMOS silicon gate process technology.
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MSM51V16160_
576-Word
16-Bit
MSM51V16160
16-bit
cycles/64ms
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TC51V
Abstract: TC51V16165BFT-70
Text: TOSHIBA m C|C1Ci7E4fl D02fi3flfl T07 m TC51Y16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The T C 5 1 V 1 6 1 65B F T is th e H yper P age M o d e (EDO) d yn am ic RAM organized 1 ,0 4 8 ,5 7 6 w o rd s by 16 bits. The TC 5 1 V 1 6 1 6 5 B F T utilizes Toshiba's C M O S silicon g a te p ro ce ss te c h n o lo g y as well as a d vanced circuit te ch n iq u e s to provide
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D02fi3flfl
TC51Y16165BFT-70
TC51V16165BFT
B-136
DR16180695
TC51V16165B
FT-70
B-137
TC51V
TC51V16165BFT-70
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OE306G
Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
Text: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .
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F1155B
F1156
KGF1191
F1254B
F1256B
514260B
OE306G
BF900
62x42b
62X42
KGF2701
S/KGF2701
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MSM51V16165DSL
Abstract: No abstract text available
Text: E2G0132-17-61 O K I Semiconductor MSM5 1VI6165 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D ESC R IPTIO N The 51V16165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. The 51V16165D / DSL achieves high integration, high-speed operation,
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E2G0132-17-61
MSM51VI6165P/PSL
576-Word
16-Bit
MSM51V16165D/DSL
heMSM51V16165D/DSLachieveshighintegration
42-pin
MSM51V16165DSL
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51V1616
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160 achieves high integration, high-speed operation, and low-power
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MSM51
V16160
576-Word
16-Bit
MSM51VI6160
MSM51V16160
42-pin
51V1616
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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MSM5117900
152-Word
MSM5117900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
DU9 308
32-PIN
MSM5117900-70
MSM5117900-80
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