Untitled
Abstract: No abstract text available
Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees
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HY62V8400C
HY62V8400
55/70/85/100ns
-100/120/150/200ns
45defl
10E03-11
MAY94
4b750fifi
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Untitled
Abstract: No abstract text available
Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
4b75Dfifl
1AD31-00-MAY95
0QG441D
HY51V16400AJ
HY51V16400ASU
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Untitled
Abstract: No abstract text available
Text: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY534256A
256KX
300mil
100BSC
300BSC
3-11dÂ
1AB06-10
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HY5118160
Abstract: No abstract text available
Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5118160
16-bit.
HY5118160
1AD15-10-MAY94
4b75Dflfl
322fi
HY5118160JC
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HYM540A100MG
Abstract: No abstract text available
Text: “H YUN D AI HYM540A100 M-Series 1M X 40-blt CMOS DRAM MODULE DESCRIPTION The HYM540A100 is a 1M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.
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HYM540A100
40-blt
40-bit
HY514400A
HYM540A100M/LM
HYM540A100MG/LMG
00Q3M3S
1CC06-01-FEB94
HYM540A100MG
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HY6264 RAM
Abstract: HY6264 Hyundai Semiconductor hy6264 Hyundai I30 Hyundai HY6264 A12C HY6264-12 HY6264-15 HY6264-70 HY6264-85
Text: HYUNDAI ELECTRONICS SI E D • 4L7SOÛÔ O OOlll 5 130 « H Y N K HY6264 «H Y UNDA I SEMICONDUCTOR 8KX 8-Bit CMOS SRAM M221201B-MAY92 DESCRIPTION FEATURES The HY6264 is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica ted using high performance CMOS process
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G0D1115
HY6264
HY6264
M221201B-MAY92
4b750flfl
T-3-12
600MIL
HY6264 RAM
Hyundai Semiconductor hy6264
Hyundai I30
Hyundai HY6264
A12C
HY6264-12
HY6264-15
HY6264-70
HY6264-85
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5B33
Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG
Text: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY5141
HYM53641OAM/ALM/ATM/ALTM
HYM536410AMG/ALMG/ATMG/ALTMG
72WIH
020f5
5B33
MJ002
HYM536410
HYM53641OAMG
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