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    HY5141 Price and Stock

    SK Hynix Inc HY514100AJ-70

    Dynamic RAM, Fast Page, 4M x 1, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY514100AJ-70 6
    • 1 $7.2
    • 10 $3.6
    • 100 $3.6
    • 1000 $3.6
    • 10000 $3.6
    		Buy Now

    HY5141 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY514100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY514100-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514100-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514100AJ Hynix Semiconductor 4Mx1, Fast Page mode Original PDF
    HY514100AT Hynix Semiconductor 4Mx1, Fast Page mode Original PDF

    HY5141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY514100A

    Abstract: HY514100ALT HY514100AJ 4Mx1
    Text: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY514100A 128ms HY514100A HY514100ALT HY514100AJ 4Mx1

    HY5117400B

    Abstract: HY514100A
    Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin

    HY5117400C

    Abstract: HY514100A HYM536810E HYM536810EM1 HYM536810EMG1
    Text: HYM536810E M1-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M1-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810E 8Mx36 8Mx36-bit HY5117400C HY514100A HYM536810EM1 HYM536810EMG1 72-Pin

    HYM536410AMG

    Abstract: hym536410am HY5117400A HY514100A
    Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /


    Original     		PDF HYM536410A 4Mx36-bit 36-bit HY5117400A HY514100A HYM536410AM HYM536410AMG 1CE11-10-DEC94 HY5117400A

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG

    Untitled

    Abstract: No abstract text available
    Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM584000A HY514100A 22fiF HYM584000AM/ALM acce4000A 1BC03-11-FEB94 0-05M 031MIN.

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF 14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT

    hym536810

    Abstract: HYM53
    Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM536400 Series 4M X 36-bit C M O S DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of thirty six HY514100 In 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW tRWU34)

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		PDF 8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi

    Untitled

    Abstract: No abstract text available
    Text: ♦H Y U N D A I HYM536400 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100 in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW 1CE02-10-MAY93

    CX-381

    Abstract: No abstract text available
    Text: -HYUNDAI HY514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514170B 256KX 16-bit 400mil 40pin 40/44pin 825mW CX-381

    512Kx1 DRAM

    Abstract: No abstract text available
    Text: »HYUNDAI HY514100B Series 4M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100B 1AC09-00-MAY94 HY514100BJ HY514100BU HY514100BSU HY514100BT 512Kx1 DRAM

    U5SB

    Abstract: 1621-B AY83
    Text: •HYUNDAI SEMICONDUCTOR HYM584000A Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of eight HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM584000A HY514100A HYM584000AM/ALM 1BC03-10-M 005f0 061MAX. U5SB 1621-B AY83

    HY514100A

    Abstract: 512Kx1+DRAM
    Text: HYUNDAI HY514100A Series SEMICONDUCTOR 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100A HY5141OOA 1AC06-20-APR93 HY514100AJ HY514100AU HY51410QAT HY514100ALT 512Kx1+DRAM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514100A 4M x1, F as t Page m ode DESCRIPTION T h is f a m ily is a 4M b it d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s


    OCR Scan     		PDF HY514100A 128ms

    L0138

    Abstract: 512Kx1
    Text: H Y 5 1 4 1 0 0 • H Y U N D A I 4M X S e r ie s 1-bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100 HY514100 1ac01-20-may94 Mb75aà QQ023à 4b750flfl L0138 512Kx1

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100A HY514100A 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM594000 HY514100 22/iF HYM594000M 1BC02-20-MAY93 251MAX. 1BC02-20-M

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100A Schot0300 1AC06-30-MAY94 D002U0Q HY514100AJ HY514100AU

    HYM533400

    Abstract: No abstract text available
    Text: HYM533400 M-Series HYUNDAI 4M x 33-bit CMOS DRAM MODULE DESCRIPTION The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM533400 33-bit HY514100A 22juF HYM533400M/LM HYM533400MG/LMG 1CE11-11-FEB94