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    HYM76V4M655HGLT6-8

    Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
    Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF PC100 4Mx16 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYM76V4M655HGLT6-8 HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372V804CS KMM372V804CS 4Mx16 KMM372V804C 8Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 8Mx64 PC133 4Mx16 HYM76V8M635HG HYM76V8M635AT6 8Mx64bits 4Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372V804BS DRAM MODULE KMM372V804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372V804BS KMM372V804BS 4Mx16 KMM372V804B 8Mx72bits KMM372V804B 4Mx16bits 400mil 168-pin

    KMM372F404BS

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F404BS KMM372F404BS 4Mx16 KMM372F404B 4Mx72bits KMM372F404B 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits


    Original     		PDF M372V0405DT0-C M372V0405DT0-C 4Mx16 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    K4E641612D-T

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs


    Original     		PDF M374F0405DT1-C M374F0405DT1-C 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin K4E641612D-T

    KMM5328000BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5328000BSW/BSWG KMM5328000BSW/BSWG 4Mx16, KMM5328000B 8Mx32bits KMM5328000B 4Mx16bits 72-pin KMM5328000BSW

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372C804BS KMM372C804BS 4Mx16 KMM372C804B 8Mx72bits KMM372C804B 4Mx16bits 400mil 168-pin

    68PIN

    Abstract: max4860
    Text: HANBit HMF4M16J4V Flash-ROM Module 8MByte 4Mx16bit , 68-pin JLCC type, 3.3V Design Part No. HMF4M16J4V GENERAL DESCRIPTION The HMF4M16J4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in an x16bit configuration. The module consists of four 2M x 8bit FROM mounted on a 68-pin, JLCC connector FR4-printed circuit


    Original     		PDF HMF4M16J4V 4Mx16bit) 68-pin HMF4M16J4V x16bit 68-pin, HMF4M16J4V-70 68PIN max4860

    HYM7V65401B

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 144pin

    HYM7V63401BTRG-75

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package


    Original     		PDF 4Mx64 PC133 4Mx16 HYM7V63401B 4Mx64bits 4Mx16bit 400mil 54pin 168pin HYM7V63401BTRG-75

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4635HGT6 HYM76V4635AT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    KMM366F404BS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1

    KMM5328004BSW

    Abstract: KMM5328004BSWG
    Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5328004BSW/BSWG KMM5328004BSW/BSWG 4Mx16, KMM5328004B 8Mx32bits KMM5328004B 4Mx16bits 72-pin KMM5328004BSW KMM5328004BSWG

    Untitled

    Abstract: No abstract text available
    Text: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin


    OCR Scan     		PDF HYM76V4M655HG 4Mx64, PC100 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYW6V4M655HG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS


    OCR Scan     		PDF KMM5368005ASW/ASWGEDO KMM5368005ASW/ASWG 4Mx16 KMM5368005ASW cycles/64ms KMM5368005ASWG 1000mil) KMM5368005A 8Mx36bits