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    Untitled

    Abstract: No abstract text available
    Text: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    KMM5368003BSW

    Abstract: KMM5368003BSWG
    Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B


    Original     		PDF KMM5368003BSW/BSWG KMM5368003BSW/BSWG 4Mx16 KMM5368003B 8Mx36bits KMM5368003B 4Mx16bits 72-pin KMM5368003BSW KMM5368003BSWG

    4Mx4 dram simm

    Abstract: No abstract text available
    Text: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C


    Original     		PDF M53620800CW0/CB0 M53620810CW0/CB0 M53620810CW0/CB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin 4Mx4 dram simm

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620800DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    KMM5368005CK

    Abstract: KMM5368005CKG KMM5368105CK KMM5368105CKG
    Text: KMM5368005CK/CKG KMM5368105CK/CKG DRAM MODULE KMM5368005CK/CKG & KMM5368105CK/CKG Fast Page Mode with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53680 1 05CK is a 8Mx36bits Dynamic


    Original     		PDF KMM5368005CK/CKG KMM5368105CK/CKG KMM5368105CK/CKG KMM53680 8Mx36bits 24-pin 28-pin 72-pin KMM5368005CK KMM5368005CKG KMM5368105CK KMM5368105CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B


    Original     		PDF KMM5368003BSW/BSWG KMM5368003BSW/BSWG 4Mx16 KMM5368003B 8Mx36bits KMM5368003B 4Mx16bits 72-pin KMM5368003BSW

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640800DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


    Original     		PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0

    Untitled

    Abstract: No abstract text available
    Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS


    Original     		PDF KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO 4Mx16 KMM5368005B 8Mx36bits KMM5368005B 4Mx16bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C


    Original     		PDF M53620812CW0/CB0 M53620812CW0/CB0 M53620812C 8Mx36bits M53620812C 24-pin 28-pin 72-pin M53620812CW0

    KMM5368003BSW

    Abstract: KMM5368003BSWG
    Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B


    Original     		PDF KMM5368003BSW/BSWG KMM5368003BSW/BSWG 4Mx16 KMM5368003B 8Mx36bits KMM5368003B 4Mx16bits 72-pin KMM5368003BSW KMM5368003BSWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D


    Original     		PDF M53620812DW0/DB0 M53620812DW0/DB0 M53620812D 8Mx36bits M53620812D 24-pin 28-pin 72-pin M53620812DW0

    DQ9-DQ12

    Abstract: No abstract text available
    Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C


    Original     		PDF M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368003CSW/CSWG 8Mx36 4Mx16 KMM5368003CSW/CSWG KMM5368003C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS


    OCR Scan     		PDF KMM5368005ASW/ASWGEDO KMM5368005ASW/ASWG 4Mx16 KMM5368005ASW cycles/64ms KMM5368005ASWG 1000mil) KMM5368005A 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: KMM5368005CK/CKG KMM5368105CK/CKG DRAM M ODULE KM M 5 3 6 8 0 0 5CK / CKG & K M M 53681 0 5 C K / C K G Fast P a g e M o d e with E D O M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM53680 1 05CK is a 8Mx36bits


    OCR Scan     		PDF KMM5368005CK/CKG KMM5368105CK/CKG KMM53680 8Mx36bits 5368005C cycles/64ms 5368105C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B


    OCR Scan     		PDF KMM5368003BSW/BSWG KMM5368003BSW/BSWG 4Mx16 KMM5368003B 8Mx36bits KMM5368003B 4Mx16bits 72-pin KMM5368003BSW

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003ASW/ASWG KM M 5368003ASW /ASW G Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003A


    OCR Scan     		PDF KMM5368003ASW/ASWG 5368003ASW 4Mx16 KMM5368003A 8Mx36bits 4Mx16bits 72-pin KMM5368003ASW

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS


    OCR Scan     		PDF KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO 4Mx16 KMM5368005B 8Mx36bits KMM5368005B 4Mx16bits 72-pin KMM5368005BSW

    K 4096

    Abstract: KMM5368103 KMM5368103B
    Text: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits


    OCR Scan     		PDF 8003B KMM53680 8Mx36bits 5368003B cycles/64ms 5368103B cycles/32ms K 4096 KMM5368103 KMM5368103B

    Untitled

    Abstract: No abstract text available
    Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to


    OCR Scan     		PDF KMM5368003CK/CKG 8Mx36 KMM53680 8Mx36bits 300mil)