Untitled
Abstract: No abstract text available
Text: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D
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Original
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M53620800DW0/DB0
M53620810DW0/DB0
M53620810DW0/DB0
M5362080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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KMM5368003BSW
Abstract: KMM5368003BSWG
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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Original
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
KMM5368003BSWG
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PDF
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4Mx4 dram simm
Abstract: No abstract text available
Text: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C
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Original
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M53620800CW0/CB0
M53620810CW0/CB0
M53620810CW0/CB0
M5362080
8Mx36bits
24-pin
28-pin
72-pin
4Mx4 dram simm
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM
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Original
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M53620800DW0/DB0
M53620810DW0/DB0
M53620800DW0/DB0
M53620810DW0/DB0
M5362080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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KMM5368005ASW/ASWGEDO
KMM5368005ASW/ASWG
4Mx16
KMM5368005ASW
cycles/64ms
KMM5368005ASWG
1000mil)
KMM5368005A
8Mx36bits
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PDF
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KMM5368005CK
Abstract: KMM5368005CKG KMM5368105CK KMM5368105CKG
Text: KMM5368005CK/CKG KMM5368105CK/CKG DRAM MODULE KMM5368005CK/CKG & KMM5368105CK/CKG Fast Page Mode with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53680 1 05CK is a 8Mx36bits Dynamic
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Original
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KMM5368005CK/CKG
KMM5368105CK/CKG
KMM5368105CK/CKG
KMM53680
8Mx36bits
24-pin
28-pin
72-pin
KMM5368005CK
KMM5368005CKG
KMM5368105CK
KMM5368105CKG
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5368005CK/CKG KMM5368105CK/CKG DRAM M ODULE KM M 5 3 6 8 0 0 5CK / CKG & K M M 53681 0 5 C K / C K G Fast P a g e M o d e with E D O M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM53680 1 05CK is a 8Mx36bits
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OCR Scan
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KMM5368005CK/CKG
KMM5368105CK/CKG
KMM53680
8Mx36bits
5368005C
cycles/64ms
5368105C
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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Original
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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Original
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M53640800DW0/DB0
M53640810DW0/DB0
M53640800DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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OCR Scan
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003ASW/ASWG KM M 5368003ASW /ASW G Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003A
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OCR Scan
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KMM5368003ASW/ASWG
5368003ASW
4Mx16
KMM5368003A
8Mx36bits
4Mx16bits
72-pin
KMM5368003ASW
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
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Original
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M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
KMM5368005BSW
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PDF
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K 4096
Abstract: KMM5368103 KMM5368103B
Text: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits
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OCR Scan
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8003B
KMM53680
8Mx36bits
5368003B
cycles/64ms
5368103B
cycles/32ms
K 4096
KMM5368103
KMM5368103B
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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Original
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C
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Original
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M53620812CW0/CB0
M53620812CW0/CB0
M53620812C
8Mx36bits
M53620812C
24-pin
28-pin
72-pin
M53620812CW0
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PDF
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KMM5368003BSW
Abstract: KMM5368003BSWG
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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Original
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
KMM5368003BSWG
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D
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Original
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M53620812DW0/DB0
M53620812DW0/DB0
M53620812D
8Mx36bits
M53620812D
24-pin
28-pin
72-pin
M53620812DW0
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PDF
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DQ9-DQ12
Abstract: No abstract text available
Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C
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Original
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M53640800CW0/CB0
M53640810CW0/CB0
M53640810CW0/CB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
DQ9-DQ12
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE
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Original
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KMM5368005CSW/CSWG
8Mx36
4Mx16
KMM5368005CSW/CSWG
KMM5368005C
8Mx36bits
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE
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Original
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M53640805CY0/CT0-C
8Mx36
4Mx16
M53640805CY0/CT0-C
8Mx36bits
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.
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Original
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M53640805BY0/BT0-C
8Mx36
4Mx16
M53640805BY0/BT0-C
8Mx36bits
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PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE
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Original
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KMM5368003CSW/CSWG
8Mx36
4Mx16
KMM5368003CSW/CSWG
KMM5368003C
8Mx36bits
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to
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OCR Scan
|
KMM5368003CK/CKG
8Mx36
KMM53680
8Mx36bits
300mil)
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PDF
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