Untitled
Abstract: No abstract text available
Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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Original
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M53640800DW0/DB0
M53640810DW0/DB0
M53640800DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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OCR Scan
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368003ASW/ASWG KM M 5368003ASW /ASW G Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003A
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OCR Scan
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KMM5368003ASW/ASWG
5368003ASW
4Mx16
KMM5368003A
8Mx36bits
4Mx16bits
72-pin
KMM5368003ASW
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
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Original
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M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
KMM5368005BSW
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PDF
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K 4096
Abstract: KMM5368103 KMM5368103B
Text: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits
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OCR Scan
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8003B
KMM53680
8Mx36bits
5368003B
cycles/64ms
5368103B
cycles/32ms
K 4096
KMM5368103
KMM5368103B
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PDF
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Untitled
Abstract: No abstract text available
Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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Original
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M53640800DW0/DB0
M53640810DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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Original
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C
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Original
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M53620812CW0/CB0
M53620812CW0/CB0
M53620812C
8Mx36bits
M53620812C
24-pin
28-pin
72-pin
M53620812CW0
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PDF
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KMM5368003BSW
Abstract: KMM5368003BSWG
Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B
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Original
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KMM5368003BSW/BSWG
KMM5368003BSW/BSWG
4Mx16
KMM5368003B
8Mx36bits
KMM5368003B
4Mx16bits
72-pin
KMM5368003BSW
KMM5368003BSWG
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D
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Original
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M53620812DW0/DB0
M53620812DW0/DB0
M53620812D
8Mx36bits
M53620812D
24-pin
28-pin
72-pin
M53620812DW0
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PDF
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DQ9-DQ12
Abstract: No abstract text available
Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C
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Original
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M53640800CW0/CB0
M53640810CW0/CB0
M53640810CW0/CB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
DQ9-DQ12
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53620805BY0/BT0-C
8Mx36
4Mx16
M53620805BY0/BT0-C
8Mx36bits
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PDF
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KMM53680
Abstract: No abstract text available
Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov., 1997) Changed the mode of parity check component from EDO to FP, refer to
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OCR Scan
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KMM5368003CK/CKG
KMM5368103CK/CKG
8Mx36
KMM5368103CK/CKG
KMM53680
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PDF
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KMM5368003CK
Abstract: KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828
Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to
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Original
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KMM5368003CK/CKG
KMM5368103CK/CKG
8Mx36
KMM5368103CK/CKG
KMM53680
KMM5368003CK
KMM5368003CKG
KMM5368103CK
KMM5368103CKG
R/TPC 828
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PDF
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