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    42N20 POWER MOSFET Search Results

    42N20 POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    42N20 POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N20

    Abstract: 42N20 DIODE N20 IXFH58N20 58N20
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous


    Original     		PDF 42N20 50N20 58N20 O-204AE 50N20 42N20 DIODE N20 IXFH58N20 58N20

    50n20

    Abstract: IXFM50N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 42N20 50N20 58N20 IXFM50N20

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 O-268 dv/00

    IXFM50N20

    Abstract: 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFM50N20 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA

    IXFM42N20

    Abstract: IXFM50N20 IXFT58N20 50N20 transistor ixfh application note TO-204 footprint ixfh 26 n 49 42N20 58N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFM42N20 IXFM50N20 IXFT58N20 50N20 transistor ixfh application note TO-204 footprint ixfh 26 n 49 42N20 58N20

    42n20

    Abstract: 50n20 to-204ae ups 017 isolated nm 232
    Text: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXTH/IXTM42N20 IXTH/IXTM50N20 O-247 42N20 50N20 O-204 O-204 O-247 42n20 50n20 to-204ae ups 017 isolated nm 232

    50n20

    Abstract: 42N20
    Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 50N20 O-247 O-204 O-247 O-204 50n20 42N20

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 50N20 O-247 O-204 O-247

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    42n20

    Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
    Text: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family


    OCR Scan     		PDF 42N20 50N20 50N20 58N20 ixys ml 075 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan     		PDF IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20

    50N20

    Abstract: 42N20 IXTH42N20
    Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200


    OCR Scan     		PDF IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    42N15

    Abstract: 079A 42N20
    Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous


    OCR Scan     		PDF D00D3b4 IXTH42N20, IXTM42N20, IXTH42N15 IXTM42N15 IXTH42N20 IXTM42N20 O-204 O-247 50-200V, 42N15 079A 42N20

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


    OCR Scan     		PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80