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    IXFH50N20S Search Results

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    IXFH50N20S Price and Stock

    IXYS Corporation IXFH50N20SP

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXFH50N20SP 5
    • 1 $36.6194
    • 10 $36.6194
    • 100 $36.6194
    • 1000 $36.6194
    • 10000 $36.6194
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    IXFH50N20SP 3
    • 1 $30.5162
    • 10 $30.5162
    • 100 $30.5162
    • 1000 $30.5162
    • 10000 $30.5162
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    IXFH50N20S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH50N20S IXYS HiperFET Power MOSFET Scan PDF

    IXFH50N20S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH50N20S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)50# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)200 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ


    Original
    IXFH50N20S PDF

    Untitled

    Abstract: No abstract text available
    Text: s HiPerFET Power MOSFET IXFH50N20S VDSS ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr tr r = 200 V = 50 A = 45 mfì < 200 ns Preliminary data Sym bol Maximum R atings Test C onditions v DSS Tj = 25°C to 175°C


    OCR Scan
    D94010DE, PDF

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan
    IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20 PDF