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    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 300 V 60 A 300 V 60 A 300 V 60 A VCE sat tfi 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 300 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF 40N30 40N30A 40N30B

    ad6v

    Abstract: 40N30A 40N30
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v

    ad6v

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v

    1M300

    Abstract: 40N30 40n30a
    Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient


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    PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns 1M300 40N30 40n30a

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient


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    PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


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    PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


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    PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFAST IGBT IXGH 40N30 IXGH 40N30A IXGH 40N30B V CES ^C25 300 V 300 V 300 V 60 A 60 A 60 A V CE sat t», 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings V CES T, = 25°C to 150°C 300 V V CGR


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    PDF 40N30 40N30A 40N30B -247A O-247

    SMD B26

    Abstract: SMD L4
    Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj


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    PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns Cto150 O-247 SMD B26 SMD L4

    2QN60

    Abstract: ixgh 1500
    Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH


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    PDF T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500

    ixgh40n30

    Abstract: No abstract text available
    Text: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S 40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300


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    PDF IXGH40N30/S IXGH40N30A/S IXGH40N30B/S 220ns 120ns O-247 ixgh40n30

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


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    PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


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    PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode

    40N30BD1

    Abstract: No abstract text available
    Text: DIXYS HiPerFAST IGBT 40N30BD1 40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o


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    PDF IXGH40N30BD1 IXGH40N30BD1S O-247SMD 40N30BD1S) O-247 360VTj 40N30BD1

    Untitled

    Abstract: No abstract text available
    Text: OIXYS VCES HiPerFAST IGBT ^C25 IXGH40N30/S 600 V 60 A IXGH40N30A/S 600 V 60 A 40N30B/S 600 V 60 A VCE sat 1.8 V 2.1 V 2.4 V tfi 220ns 120ns 75 ns Preliminary data TO-247 SMD* TestConditions V«s ^ = 25°C to 150°C v COR TJ = v ots Maximum Ratings


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    PDF IXGH40N30/S IXGH40N30A/S IXGH40N30B/S 220ns 120ns O-247 O-24775

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


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    PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50