IXGH40N30BD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30BD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160
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IXGH40N30BD1
O-247
IXGH40N30BD1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30A VCES IC25 VCE sat tfi = 300 V = 60 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH40N30A
O-247
Gat21
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30BD1 VCES IC25 VCE sat tfi = 300 V = 60 A = 2.4 V = 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient
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IXGH40N30BD1
O-247
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IXGH40N30A
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30A VCES IC25 VCE sat tfi = 300 V = 60 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH40N30A
IXGH40N30A
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IXGH40N30BD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH40N30BD1 Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160
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IXGH40N30BD1
O-247
IXGH40N30BD1
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IXGD32N60B-5X
Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-3X
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7Y
IXGD200N60B-9X
IXGD2N100-1M
IXGD4N100-1T
IXGD8N100-2L
IXGD32N60B-5X
ixgh45n120
IXGH24N60B
IXGH50N60B
IXGH32N60B
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixgh40n30
Abstract: No abstract text available
Text: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300
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IXGH40N30/S
IXGH40N30A/S
IXGH40N30B/S
220ns
120ns
O-247
ixgh40n30
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IXGH40N30
Abstract: high current igbt
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient
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IXGH40N30BD1
O-247
IXGH40N30
high current igbt
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smd DIODE 3FS
Abstract: IXGH40N30BD 40N30
Text: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20
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IXGH40N30BD1
IXGH40N30BD1S
13/10Nm/lb
O-247
Cha55
smd DIODE 3FS
IXGH40N30BD
40N30
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40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
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IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
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Untitled
Abstract: No abstract text available
Text: OIXYS VCES HiPerFAST IGBT ^C25 IXGH40N30/S 600 V 60 A IXGH40N30A/S 600 V 60 A IXGH40N30B/S 600 V 60 A VCE sat 1.8 V 2.1 V 2.4 V tfi 220ns 120ns 75 ns Preliminary data TO-247 SMD* TestConditions V«s ^ = 25°C to 150°C v COR TJ = v ots Maximum Ratings
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IXGH40N30/S
IXGH40N30A/S
IXGH40N30B/S
220ns
120ns
O-247
O-24775
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET HiPerFAST IGBT IXGH40N30A IXGH40N30AS V C ES ^C25 V C E sat t. = 300 V = 60 A = 2.1 V = 120 ns TO -247 SMD (40N 30A S ) T, = 25°C to 150°C; RGE = 1 MO 300 Continuous ±20 Transient ±30 T c = 25 °C 60 T c = 90 °C 40 I, T SSOA
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IXGH40N30A
IXGH40N30AS
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ixgr32n60cd1
Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1
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O-268
ISOPLUS247TM
OT-227B
T0-220
PLUS247TM
O-263
O-247
T0-204
O-264
IXGA12N100U1
ixgr32n60cd1
IXGT-32N60BD1
IXGH32N60CD1
IXGH24N60CD1
IXGH17N100AU1
IXGK50N60BD1
IXGH24N60BD1
IXGH40N30BD
ixgh15n120cd1
IXGH32N60
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SMD B26
Abstract: SMD L4
Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
Cto150
O-247
SMD B26
SMD L4
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IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-33
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7X
IXGD200N60-9X
IXGD8N100-2L
IXGD12N100-33
IXGD17N100-4T
IXGH24N50B
IXGH50N60B
IXGH32N60B
IXGH50N60A
ixgh24n60a equivalent
IXGH24N60A
IXGH17N100
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