47-16l
Abstract: 74912 CS-8151T7 ltna
Text: 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS-8151 is a precision 5V, 100mA m icro-power voltage regulator with very low quiescent current 400jiA. typical at 200jaA load . The 5V output is accurate w ithin ±2% and supplies
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100mA
CS-8151
200nA
400mV
O-221'
CS-8151T7
47-16l
74912
ltna
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Untitled
Abstract: No abstract text available
Text: CS8151 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP D escription The CS8151 is a precision 5V, 100mA m icro-power voltage regulator w ith very low quiescent current 400jiA typical at 200jiA load . The 5V output is accurate w ithin ±2% and supplies
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CS8151
100mA
CS8151
400jiA
200jiA
400inV.
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Untitled
Abstract: No abstract text available
Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)
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IDT7M4048
IDT7MB4048
400jiA
32-pin,
IDT7M4048/7MB4048
7MB4048SXXP
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Dense-Pac Microsystems
Abstract: No abstract text available
Text: COPIA D P Z 128W 16A 3 Dense-Pac Microsystems. Inc. q 128K X 16 FLASH EEPROM DENSE-STACK M ODULE PRELIM IN ARY DESCRIPTION: The D PZ128W 16A3 "DEN SE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip
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DPZ128W16
DPZ128W16A3
DPZ128W16A3
125-C
120ns
150ns
170ns
200ns
250ns
30A067-0Ã
Dense-Pac Microsystems
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CE203
Abstract: No abstract text available
Text: □PM DPE8M656 Dense-Pac Microsystems. Inc. 16K X 16 CMOS EEPROM MODULE O DESCRIPTION: The D PE8M 656 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPRO M module and may be organized as 16K X 16 or 32 K X 8. The module is built with four low-power C M O S 8K X 8 EEPROM s
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DPE8M656
DPE8M656
16-bit
32-BW*
500mV
30a00908
CE203
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27512-3
Abstract: EPROM AM27256 AM27512 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064
Text: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available
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Am27512
250ns
525mW
132mW
28-pin
Am2764,
Am27256
Am27128
Am92256-256K
27512-3
EPROM AM27256
AM27S12
am92256
27512
AM27256 150
Line Interactive ups with circuit diagram
A15C
IN3064
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80C51
Abstract: 80C562 83C562 8XC562 S80C562-4A68 S83C562-4A68 ebft
Text: • 711062b ÜDbbSTG MfiS ■ P H I N Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 80C562/83C562 Single-chip 8-bit microcontroller with 8-bit A/D, capture/compare timer, high-speed outputs, PWM DESCRIPTION
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711065b
80C562/83C562
8XC562)
80C51
83C562/83C562
80C51.
8XC562
83C562)
80C562
83C562
S80C562-4A68
S83C562-4A68
ebft
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LS221
Abstract: LS123 T54LS221D2
Text: 35 PRELIMINARY DATA DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT-TRIGGER INPUTS DESCRIPTION The T54LS/T74LS221 shows multivibrators featu ring a negative-transition-triggered input and a positive-transition-triggered input; both of them can be used as an inhibit input. Pulse triggering comes
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T54LS/T74LS221
LS221
LS123
T54LS221D2
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as
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TC5816ADC
16Mbit
TC5816
NV16030496
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Untitled
Abstract: No abstract text available
Text: XL93LC06A 256-Bit Serial Electrically Erasable PROM with 2V Read Capability PIN CONFIGURATIONS FEATURES • 4.5 to 5.5V Operation Plastic Dual-in-line "P" Package ■ Extended Temperature Range: -40°C to +85°C ■ State-of-the-Art Architecture — Nonvolatile data storage
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XL93LC06A
256-Bit
250KHz
GGD20bl
QQ02Qb3
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HU106
Abstract: No abstract text available
Text: HU 106 HARRIS S E M I C O N D U C T O R _ 8-Bit, 35 MSPS, High Speed D/A Converter TTL Input January 1998 Description High Speed (Maximum Conversion Speed) Non-Linearity. Less Than ±1/2 LSB
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HU106
HI1106
35MHz,
200mW
35MHz
HU106
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910-B
Abstract: 6502MP STA02
Text: A N A LO G D E V IC E S |jiP-Compatible 10-Bit High-Speed A/D Converter ADC-910 FEATURES • • • • • • • • • Includes Clock, Reference, 3 -State Buffered Outputs Fast Conversion Time .6 / jls
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16-Bit
10-Bit
ADC-910
910-B
6502MP
STA02
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Untitled
Abstract: No abstract text available
Text: n $ î. SGS-THOMSON IMDIêœiLIKêraRilDIgi L6260 2.7 - 5.5V DISK DRIVER SPINDLE & VCM, POWER & CONTROL COMBO’S PRODUCT PREVIEW GENERAL • 5V AND 3V OPERATION. ‘ REGISTER BASED ARCHITECTURE . MINIMUM EXTERNAL COMPONENTS ■ SLEEP AND IDLE MODES FOR LOW
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L6260
300mA
TQFP64
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Untitled
Abstract: No abstract text available
Text: HI1106 HARRIS S E M I C O N D U C T O R Ê È È È È 8-Bit, 35 MSPS, High Speed D/A Converter TTL Input August 1997 Features Description • R eso lution .8-Bit The HI1106 is an 8-bit, 35MHz, high-speed D/A converter
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HI1106
HI1106
35MHz,
200mW
35MHz
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Untitled
Abstract: No abstract text available
Text: OKI semiconductor MSM6870-5 BASEBAND FILTER A N D MSK M O D E M LSI FOR CORDLESS TE GENERAL DESCRIPTION The MSM6870 is a comm unication LSI for CORDLESS TELEPHONE. The MSM6870 consists of a 1200 bps MSK M inimum shift keying modem and a baseband filters.
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MSM6870-5
MSM6870
IV-E-34
IV-E-35
SYSTEM-MSM6870-5
6864M
047J1
047J1
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Untitled
Abstract: No abstract text available
Text: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes
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KDA0484
85MHz
32x32x2
256x8
KDA0484.
KDA0484
KDA0484L-110
110MHz
84-PLCC-SQ
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DS60037
Abstract: 28C64B-25 28C64B M/28C64B
Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation
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28C64B
28C64B
DS11120A-7
120ns
150ns
200ns
250ns
DS60037
28C64B-25
M/28C64B
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DS11021
Abstract: No abstract text available
Text: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V
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27LV512
28-pin
DS11021
8x20mm
27LV512
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loo8
Abstract: No abstract text available
Text: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages
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27C64
27C64
120ns.
DS11107H-page
MCHPD001
loo8
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Untitled
Abstract: No abstract text available
Text: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns access time available • CMOS Technology for low power consumption bit (electrically) Programmable Read Only Memory. The
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27C256
27C256
DS110011-page
MCHPD001
DS11001
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8 pin ic lm 358
Abstract: IC LM 258 SA532D lm2904n M158 wdc 1994 lm 358 ic IC OP AMP LM358N NE532D NE532N
Text: Product specification Philips Semiconductors Linear Products NE/SA/SE532/ LM158/258/358/A/2904 Low power dual operational amplifiers DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally
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NE/SA/SE532/
LM158/258/358/A/2904
532/358/LM2904
-30VDC
7110fl5b
007fl507
8 pin ic lm 358
IC LM 258
SA532D
lm2904n
M158
wdc 1994
lm 358 ic
IC OP AMP LM358N
NE532D
NE532N
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rover
Abstract: CAT35C704 256x16 eprom 224 m5e 74S-77Q0 35C704P
Text: CATALYST SEMICONDUCTOR 4SE D nt.ab'is oooimms i * cst r~H'/3~27 IIHICRTRLY5T mil II S C H I C O N D U C T O * 2231 CALLE DE LUKA. SASTA CLARA, CA 9S0S4 TtitpKoru 40! 74S-77Q0 CAT35C704, CAT35C704I [Industrial Temperature] 4K -bit SECURE ACCESS Serial E^PROM
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74S-77Q0_
CAT35C704,
CAT35C704I
CAT35C704
rover
256x16 eprom
224 m5e
74S-77Q0
35C704P
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11.0592mhz crystal oscillator
Abstract: EN50065-1 1042U PLCC28 ST7536 ST7536CFN 712-12 7492 pin out diagram
Text: Æ 7 SG S-THO M SO N ST7536 POWER LINE MODEM } • HALF DUPLEX SYNCHRONOUS FSK MODEM • Two programmable channels for 600bps data rate • Two programmable channels for 1200bps data rate ■ AUTOMATICALLY TUNED Rx AND Tx FILTERS ■ TX CARRIER FREQUENCIES SYNTHESIZED
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ST7536
600bps
1200bps
600bps)
1200bps)
DH028/29
EN50065-1
PLCC28
ST7536CFN
ST7536
11.0592mhz crystal oscillator
1042U
PLCC28
ST7536CFN
712-12
7492 pin out diagram
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