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    DS60037

    Abstract: 28C64B-25 28C64B M/28C64B
    Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation


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    PDF 28C64B 28C64B DS11120A-7 120ns 150ns 200ns 250ns DS60037 28C64B-25 M/28C64B

    28C256B

    Abstract: EEPROM 28C256 28C256 microchip
    Text: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times


    OCR Scan
    PDF 250ns 150nA 64-Byte DS11116C-7 28C256 28C256- 120ns 150ns 200ns 28C256B EEPROM 28C256 28C256 microchip

    26c64

    Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
    Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times


    OCR Scan
    PDF 28C64B 250ns 64-Byte DS11120A-7 bl03S01 28C64B_ T-46-13-27 28C64B- 120ns 150ns 26c64 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64

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    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation


    OCR Scan
    PDF 28C64B 250ns 64-Byte DS11120A-7 blQ3E01 28C64B_ 28C64B- DS11120A-8 120ns 150ns