DS60037
Abstract: 28C64B-25 28C64B M/28C64B
Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation
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28C64B
28C64B
DS11120A-7
120ns
150ns
200ns
250ns
DS60037
28C64B-25
M/28C64B
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28C256B
Abstract: EEPROM 28C256 28C256 microchip
Text: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times
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250ns
150nA
64-Byte
DS11116C-7
28C256
28C256-
120ns
150ns
200ns
28C256B
EEPROM 28C256
28C256 microchip
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26c64
Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times
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28C64B
250ns
64-Byte
DS11120A-7
bl03S01
28C64B_
T-46-13-27
28C64B-
120ns
150ns
26c64
26C64B
28C64B
28C64B-25
28C64B-70
28C64
28C64B-12
28C64B-90
28C64B EEPROM
*26C64
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation
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28C64B
250ns
64-Byte
DS11120A-7
blQ3E01
28C64B_
28C64B-
DS11120A-8
120ns
150ns
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