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B&B Electronics Manufacturing Company 1108X20MM TL Bushing, 20 mm Finished Bore, Steel \| B&B Manufacturing 1108X20MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	1108X20MM	Bulk		3 Weeks	1	1 $11.46 10 $10.89 100 $9.74 1000 $9.74 10000 $9.74	Get Quote
B&B Electronics Manufacturing Company 1008X20MM TL Bushing, 20mm Finished Bore \| B&B Manufacturing 1008X20MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	1008X20MM	Bulk		3 Weeks	1	1 $10.36 10 $10.04 100 $10.04 1000 $10.04 10000 $10.04	Get Quote
B&B Electronics Manufacturing Company 1008X20MMSS SS, TL Bushing, 20mm Finished Bore \| B&B Manufacturing 1008X20MMSS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	1008X20MMSS	Bulk		3 Weeks	1	1 $157.08 10 $152.25 100 $152.25 1000 $152.25 10000 $152.25	Get Quote
SKF PHF TB1108X20MM Taper Bushings, Bore Diam 20, Cast Iron, Wid 22.2 mm, PHF Series \| SKF PHF TB1108X20MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PHF TB1108X20MM	Bulk		3 Weeks	1	1 $4.14 10 $4.14 100 $4.14 1000 $4.14 10000 $4.14	Get Quote
SKF PHF TB1008X20MM Taper Bushings, Bore Diam 20, Cast Iron, Wid 22.2 mm, PHF Series \| SKF PHF TB1008X20MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PHF TB1008X20MM	Bulk		3 Weeks	1	1 $3.68 10 $3.68 100 $3.68 1000 $3.68 10000 $3.68	Get Quote

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8X20MM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
662 marking Abstract: A821 Text: GAS DISCHARGE TUBE 8x20mm No. A821 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Insertable in holders 416 and 740 Specifications Packaging A821: 00=Bulk (100 pcs.) Materials Housing: Gas: Ceramic non-radioactive Arc Voltage @ 1A	Original	8x20mm 20kA/20A) UL-497B 57845/VDE 662 marking A821	PDF
820 marking Abstract: 662 marking A820 Gas discharge tube Text: GAS DISCHARGE TUBE 8x20mm No. A820 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Specifications Packaging A820: 00=Bulk (100 pcs.) Materials Housing: Gas: Leads: Ceramic non-radioactive tin plated Arc Voltage @ 1A	Original	8x20mm 20kA/20A) UL-497B 57845/VDE 820 marking 662 marking A820 Gas discharge tube	PDF
gas discharge tube Abstract: 662 marking UL-497B 820 marking A820 Text: GAS DISCHARGE TUBE 8x20mm No. A820 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Specifications Packaging A820: 00=Bulk (100 pcs.) Materials Housing: Gas: Leads: Ceramic non-radioactive tin plated Arc Voltage @ 1A	Original	8x20mm 20kA/20A) UL-497B 57845/VDE gas discharge tube 662 marking UL-497B 820 marking A820	PDF
diode 10 35L Abstract: UT62L256C-35 UT62L256C-70 UT62L256CPC-35L UT62L256CPC-35LL UT62L256CPC-70L UT62L256CPC-70LL UT62L256CSC-35L P80057 Text:  UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original Rev. 1.0 Sample ready and release Rev. 1.1 1.Add 28-pin 8x20 mm TSOP-I 2.Add 28L 8x20mm TSOP-I outline dimension Rev. 1.2 Add order information for lead free product	Original	UT62L256C 28-pin 8x20mm P80057 28PIN diode 10 35L UT62L256C-35 UT62L256C-70 UT62L256CPC-35L UT62L256CPC-35LL UT62L256CPC-70L UT62L256CPC-70LL UT62L256CSC-35L P80057	PDF
a634 Abstract: No abstract text available Text: for ChipCorder Products Table 1: ISD Device Package Options Package Options1 E ISD Series G P S T X W Z 8x13.4mm 0.350 inch 0.600 inch 0.300 inch 8x20mm Die Wafer Chip Scale	Original	8x20mm ISD4003 a634	PDF
662 marking Abstract: MARKING CODE A821 A821 UL-497B Text: GAS DISCHARGE TUBE 8x20mm No. A821 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Insertable in holders 416 and 740 Specifications Packaging A821: 00=Bulk (100 pcs.) Materials Housing: Gas: Ceramic non-radioactive Arc Voltage @ 1A	Original	8x20mm 20kA/20A) UL-497B 57845/VDE 662 marking MARKING CODE A821 A821 UL-497B	PDF
tsop32 8x20 Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127 Text: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O	Original	M68AF127B PDIP32 TSOP32 tsop32 8x20 M68AF127B PDIP32 SO32 TSOP32 M68AF127	PDF
M68AW127B Abstract: SO32 TSOP32 Text: M68AW127B 1Mbit 128K x8 , 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O	Original	M68AW127B TSOP32 M68AW127B SO32 TSOP32	PDF
T14L1024N Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for	Original	T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32thout 36-Ball 8x10mm) T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W	PDF
ST m27c512 Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001 Text: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous	Original	CREPROM/0202 ST m27c512 TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001	PDF
Untitled Abstract: No abstract text available Text: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP	Original	HY62U8100B 128Kx8bit HY62U8100B 100ns	PDF
28C16A Abstract: No abstract text available Text: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19	Original	28C16A DS11125G-page 28C16A	PDF
tdb 0139 Abstract: VSOP 28 28LV64A ic 8870 ttl Text: 28LV64A 64k 8k x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM I/O0.I/O7 • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation – 8 mA Active – 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention >200 years	Original	28LV64A Time--300 28-pin 32-pin DS21113B-page tdb 0139 VSOP 28 28LV64A ic 8870 ttl	PDF
HY62U8200LST Abstract: No abstract text available Text: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and	Original	HY62V8200- /HY62U8200- 256Kx8bit HY62U8200- 32pin 8x20mm HY62U8200LST	PDF

ISD2500 Abstract: ISD2532-40-48-64 Text: ! "#	Original		PDF
T15M1024A Abstract: T15M1024A-100N T15M1024A-100NI T15M1024A-100P T15M1024A-100PI T15M1024A-55D T15M1024A-55DI T15M1024A-70H T15M1024A-70HI Text: tm TE CH Preliminary T15M1024A 128K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES • Low-power consumption - Active: 40mA at 55ns - Stand-by: 15uA CMOS input/output • 55/70/100 ns access time GENERAL DESCRIPTION The T15M1024A is a very Low Power CMOS Static RAM organized as 131,072 words by 8 bits.	Original	T15M1024A T15M1024A T15M1024A-100N T15M1024A-100NI T15M1024A-100P T15M1024A-100PI T15M1024A-55D T15M1024A-55DI T15M1024A-70H T15M1024A-70HI	PDF
CS18LV Abstract: 8X13 CS18LV10245 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC Text: High Speed Super Low Power SRAM CS18LV10245 128K-Word By 8 Bit DESCRIPTION The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by 8bits and operates from a wide range of 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high	Original	CS18LV10245 128K-Word CS18LV10245 55/70ns 32-pin CS18LV 8X13 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC	PDF
EPROM AMD Abstract: VSOP 28 NM27C256N120 TC54256AF 27c256-15 TEXAS INSTRUMENTS 28/H5GQ1H24MJR-T0C NM27C256N150 27c256-20 TEXAS INSTRUMENTS M27C256B-10C6 27C64-12L Text: EPROM EPROM Cross Reference Guide INTRODUCTION The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes to assist in determining the specifications of a	Original	28-lead 28-lead 32-lead 27C512A 27C512A 8x20mm DS11178C-page EPROM AMD VSOP 28 NM27C256N120 TC54256AF 27c256-15 TEXAS INSTRUMENTS 28/H5GQ1H24MJR-T0C NM27C256N150 27c256-20 TEXAS INSTRUMENTS M27C256B-10C6 27C64-12L	PDF
M29W010 Abstract: M29W010B PLCC32 TSOP32 Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING SUPPLY VOLTAGE – 2.7V to 3.6V Supply Voltage for Program, Erase and Read operations FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)	Original	M29W010B 128Kb AI02754 M29W010BT, M29W010BB TSOP32 M29W010 M29W010B PLCC32 TSOP32	PDF
Device M29F010B Abstract: M29F010B PDIP32 PLCC32 TSOP32 Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING SUPPLY VOLTAGE – 5V ± 10% Supply Voltage for Program, Erase and Read operations FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAMERASE CONTROLLER (P/E.C.)	Original	M29F010B 128Kb PDIP32 TSOP32 Device M29F010B M29F010B PDIP32 PLCC32 TSOP32	PDF
NIPPON CAPACITORS Abstract: TIS149 Text: 1 NIPPON i MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS I CHEMhCON¡ •Lon g life and high reliability for 4>4X5 to 4>8X20mm range •Endurance with ripple current: 105C 3000 to 6000hours •Suitable for long life and high reliability required products •Solvent-proof type, see page16	OCR Scan	8X20mm 6000hours page16 50Vdc 120Hz) NIPPON CAPACITORS TIS149	PDF
Untitled Abstract: No abstract text available Text: • M ic r o c h ip 27C512A 512K 64K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 ¡iA Standby current • Factory programming available • Auto-insertion-compatible plastic packages	OCR Scan	28-pin 32-pin 27C512A 27C512A= DS11173E-page 27C512A	PDF
Untitled Abstract: No abstract text available Text: $ 27LV512 M ic r o c h ip 512K 64K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • W ide voltage range 3.0V to 5.5V • High speed performance - 200 ns access tim e available at 3.0V • CMOS Technology fo r low pow er consum ption - 12 m A Active current at 3.0V	OCR Scan	27LV512 28-pin 32-pin DS11021 27LV512 8x20mm	PDF
DS11021 Abstract: No abstract text available Text: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V	OCR Scan	27LV512 28-pin DS11021 8x20mm 27LV512	PDF

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8X20MM Search Results

8X20MM Price and Stock

B&B Electronics Manufacturing Company 1108X20MM

B&B Electronics Manufacturing Company 1008X20MM

B&B Electronics Manufacturing Company 1008X20MMSS

SKF PHF TB1108X20MM

SKF PHF TB1008X20MM

8X20MM Datasheets Context Search

662 marking

820 marking

gas discharge tube

diode 10 35L

a634

662 marking

tsop32 8x20

M68AW127B

T14L1024N

ST m27c512

Untitled

28C16A

tdb 0139

HY62U8200LST

ISD2500

T15M1024A

CS18LV

EPROM AMD

M29W010

Device M29F010B

NIPPON CAPACITORS

Untitled

Untitled

DS11021