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    Sullins Connector Solutions GRPB132MWCN-RC

    CONN HEADER R/A 26POS 1.27MM
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    DigiKey GRPB132MWCN-RC Bag 1,000
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    Hubbell Wiring Device-Kellems HBL2132MW

    Marine Style Dup Rcpt, 15A 125V, Wh |Hubbell Wiring Devices HBL2132MW
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    Newark HBL2132MW Bulk 1
    • 1 $27.85
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    Sager HBL2132MW 1
    • 1 $22.98
    • 10 $21.58
    • 100 $19.51
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    Hubbell Premise Wiring HBL2132MW

    MARINE STYLE DUP RCPT, 15A 125V, WH | Hubbell Wiring Device-Kellems HBL2132MW
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    RS HBL2132MW Bulk 18 Weeks 1
    • 1 $27.85
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    • 100 $25.34
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    132MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B2716

    Abstract: m2716 FDIP24W M271616
    Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns AI00784B B2716 FDIP24W M271616

    1N914

    Abstract: FDIP24W M2716
    Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W

    B2716

    Abstract: FDIP24W M2716 m2716 dip M2716* eprom
    Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 FDIP24W m2716 dip M2716* eprom

    AM2716

    Abstract: circuit diagram of m2716 m2716 1N914 FDIP24W
    Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS and OUTPUTS TTL COMPATIBLE


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W AM2716 circuit diagram of m2716 1N914 FDIP24W

    IEC825

    Abstract: MAX3656 MAX3656ETG SLT3120-DN
    Text: 19-2790; Rev 0; 3/03 155Mbps to 2.5Gbps Burst-Mode Laser Driver Features ♦ Multirate Operation from 155Mbps to 2.5Gbps ♦ Burst Enable/Disable Delay <2ns ♦ Burst On-Time of 576ns to Infinity The MAX3656 is packaged in a small, 24-pin, 4mm ✕ 4mm thin QFN package and consumes only 132mW


    Original     		PDF 155Mbps 576ns MAX3656 24-pin, 132mW IEC825 MAX3656ETG SLT3120-DN

    1N914

    Abstract: FDIP24W M2716
    Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W

    1N914

    Abstract: FDIP24W M2716
    Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED 1 INPUTS and OUTPUTS TTL COMPATIBLE


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W

    1N914

    Abstract: FDIP24W M2716
    Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W

    B2716

    Abstract: B-2716
    Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


    Original     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 B-2716

    C3174

    Abstract: McKenzie transistor c3174 ADSP2187L ADSP-2187L AD1847 ADSP-2100 ADSP-2181 8K24
    Text: a FEATURES PERFORMANCE 19 ns Instruction Cycle Time @ 3.3 Volts, 52 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in Every Instruction Cycle Multifunction Instructions


    Original     		PDF ADSP-2100 Two27) ADSP-2187LKST-160 ADSP-2187LBST-160 ADSP-2187LKST-210 ADSP-2187LBST-210 100-Lead C3174 McKenzie transistor c3174 ADSP2187L ADSP-2187L AD1847 ADSP-2181 8K24

    SSOT23-6

    Abstract: FAN5622 FAN5624UMPX fan5626 1910K FAN5624 FAN5626LX led driver SOT23 6pin boost
    Text: FAN5622 / FAN5624 / FAN5626 Linear LED Drivers with Single-Wire Digital Interface Features Description ƒ Family of Three Linear Current-Sink LED Drivers that Support 2, 4, or 6 LED Outputs ƒ Current Sink Driver for Each LED Output: – 30mA Maximum Output Current


    Original     		PDF FAN5622 FAN5624 FAN5626 FAN5622, FAN5624, FAN5626 FAN5622/24/26 SSOT23-6 FAN5624UMPX 1910K FAN5626LX led driver SOT23 6pin boost

    flash card 68 pin

    Abstract: Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL
    Text: Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 2 April 1998 HITACHI CARD FAMILY Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 3 Hitachi Card Family Flash-based memory cards are used in a variety of compact devices, including notebook computers, personal organisers and


    Original     		PDF 150MB D-85622 flash card 68 pin Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL

    Untitled

    Abstract: No abstract text available
    Text: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module


    Original     		PDF SM5364000 SM5364000 16MByte 16-megabyte 72-pin, 60/70/80ns

    27512-3

    Abstract: EPROM AM27256 AM27512 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064
    Text: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available


    OCR Scan     		PDF Am27512 250ns 525mW 132mW 28-pin Am2764, Am27256 Am27128 Am92256-256K 27512-3 EPROM AM27256 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064

    SM2716

    Abstract: No abstract text available
    Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED


    OCR Scan     		PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns SM2716

    Untitled

    Abstract: No abstract text available
    Text: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED


    OCR Scan     		PDF 2048x 525mW 132mW M2716-1 350ns M2716 450ns

    AM27512

    Abstract: AM27S12 AM2764 A15C IN3064 am27256 am27512a
    Text: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available


    OCR Scan     		PDF Am27512 250ns 525mW 132mW 28-pin Am2764, Am27256 Am27128 Am92256-256K AM27S12 AM2764 A15C IN3064 am27512a

    VDR 14D

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68U1000BL/L-L 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION >Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 132nW(max.)L-Version : 33pW(max.)LL-Version Operating : 132mW(max.)


    OCR Scan     		PDF KM68U1000BL/L-L 128Kx8 100ns 132nW 132mW KM68U10OOBLG/BLG-L: 525mil) KM68U1000BLT/BLT-L KM68U1000BLR/BLR-L: KM68U1000BLVBL-L VDR 14D

    THM365120AS80

    Abstract: tc51256t THM365120 TC51256
    Text: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required


    OCR Scan     		PDF THM365120AS-70, TKM365120AS TC514256AJ TC51256T THM365120AS THM365120AS-70 THM365120AS-80 THM365120AS-10 100ns 130ns THM365120AS80 THM365120 TC51256

    vmos

    Abstract: S4716 S4264 vmos to S68332 S4216B S6831B
    Text: AMI ADVANCED PRODUCT DESCRIPTION S4716 16,384 BIT 2048 X 8 UV ERASABLE VMOS EPROM Features General Description □ Single + 5 Volt P ow er Supply □ F ast A ccess Time: 250ns Maximum □ Pin Compatible w ith AM I’s 16K, 32K and 64K ROMs □ Low Pow er D issipation


    OCR Scan     		PDF S4716 250ns 525mA 132mW S4716 S4216B S6831B S68332 vmos S4264 vmos to

    MO-23

    Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
    Text: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as


    OCR Scan     		PDF IHM36204QAS/ASG-60/70/80 THM362040A TC514400ASJ TC511000BFT 130ns THM362040AS/ASG-60/70/80 THM362040AS/ASG THM362040AS/ASG-60 TC514400ASJ TC511000BFT MO-23 THM362040ASG-60 MO23 CDQ2 THM362040ASG

    Untitled

    Abstract: No abstract text available
    Text: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A


    OCR Scan     		PDF MB85346A-60/-70/-80 MB85346A MB814400A MB81C1000A 72-pad MSS-72P-P11

    MB85323A-70

    Abstract: No abstract text available
    Text: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A


    OCR Scan     		PDF MB85323A-60/-70/-80 MB85323A MB814400A MB81C1000A a72-pad MSS-72P-P37 MB85323A-70

    ite 8892

    Abstract: MB8532 MB85323A-70
    Text: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four


    OCR Scan     		PDF 5323A MB85323-A MB814400A MB81C1000A MB85323A 72-pad MSS-72P-P37 ite 8892 MB8532 MB85323A-70