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    36N30P Search Results

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    36N30P Price and Stock

    Littelfuse Inc IXTP36N30P

    MOSFET N-CH 300V 36A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP36N30P Tube 2,459 1
    • 1 $4.78
    • 10 $4.78
    • 100 $3.2482
    • 1000 $2.47226
    • 10000 $2.32789
    		Buy Now

    Littelfuse Inc IXTA36N30P

    MOSFET N-CH 300V 36A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA36N30P Tube 1,273 1
    • 1 $4.94
    • 10 $4.94
    • 100 $3.3566
    • 1000 $2.55473
    • 10000 $2.40555
    		Buy Now

    Littelfuse Inc IXTQ36N30P

    MOSFET N-CH 300V 36A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ36N30P Tube 299 1
    • 1 $3.47
    • 10 $3.47
    • 100 $2.75067
    • 1000 $2.30612
    • 10000 $2.30612
    		Buy Now

    Littelfuse Inc IXFA36N30P3

    MOSFET N-CH 300V 36A TO263AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFA36N30P3 Tube 84 1
    • 1 $5.7
    • 10 $5.7
    • 100 $3.8709
    • 1000 $2.94617
    • 10000 $2.77414
    		Buy Now

    Littelfuse Inc IXFP36N30P3

    MOSFET N-CH 300V 36A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP36N30P3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.5432
    • 10000 $3.5432
    		Buy Now
    Find more 36N30P price and stock on Findchips.com

    36N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    36N30P

    Abstract: 36N30
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 36N30P O-220 065B1 728B1 123B1 728B1 36N30P 36N30

    36N30

    Abstract: IXTQ36N30P 36N30P
    Text: PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 36N30P 36N30P O-263 O-220 O-263 O-220) 36N30 IXTQ36N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 36N30P O-263 36N30P

    36N30P

    Abstract: 36N30 IXTA36N30P 36N30P equivalent IXTQ36N30P
    Text: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 36N30P O-263 36N30P 36N30 IXTA36N30P 36N30P equivalent IXTQ36N30P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP