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    Lite-On Semiconductor Corporation LTR-743DBM1-TA

    SENSOR PHOTODIODE 880NM RADIAL
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    DigiKey LTR-743DBM1-TA Ammo Pack 2,000
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    Avnet Americas LTR-743DBM1-TA Bag 22 Weeks 2,000
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    Mouser Electronics LTR-743DBM1-TA 5,878
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    Lite-On Semiconductor Corporation LTR743DBM1TA

    IR EMITTER AND DETECTOR Optoelectronic Device
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    ComSIT USA LTR743DBM1TA 1,000
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    43DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA1718-1P

    Abstract: EIB1718-1P
    Text: Excelics EIA/EIB1718-1P PRELIMINARY DATA SHEET 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(43dBm TYPICAL)


    Original     		PDF EIA/EIB1718-1P 43dBm EIA1718-1P 32dBm 175oC 150oC 45dBc 20dBm/Tone -65/150oC EIA1718-1P EIB1718-1P

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    212-PIN

    Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
    Text: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package


    Original     		PDF P02221B2P 500mW 43dBm 14GHz OT-89 KP035J P0222e. 212-PIN EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222

    sumitomo 131 datasheet

    Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		PDF P0120008P 43dBm OT-89 17GHz KP028J P0120008P sumitomo 131 datasheet DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J RR0816

    P012

    Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


    Original     		PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A 2300MHz

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    Untitled

    Abstract: No abstract text available
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)


    Original     		PDF LT6402-12 300MHz 300MHz. 12-bit 14-bit 75MHz 20MHz

    AP205A

    Abstract: Amplifier SOT-89 c4 mmic C4 sot 89 sot89 mmic 25 AP205 mmic amplifier sot-89 C5100 mmic C5 sot 89
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


    Original     		PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A Amplifier SOT-89 c4 mmic C4 sot 89 sot89 mmic 25 AP205 mmic amplifier sot-89 C5100 mmic C5 sot 89

    mmic C4 sot 89

    Abstract: No abstract text available
    Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


    Original     		PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209 OT-89) mmic C4 sot 89

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


    Original     		PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP249 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 43dBm Output IP3 • 26dB Gain • 24dBm P1dB • Single +9V Supply •C DMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP249 is a high linearity amplifier designed with GaAs MMIC. AP249 is designed for applications such as GSM, CDMA, WCDMA driver devices which require high IP3


    Original     		PDF AP249 43dBm 24dBm AP249

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    LT6402

    Abstract: OIP310M OIP320M OIP325M LTC17XX LTC22xx LC-B-B
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)


    Original     		PDF LT6402-12 300MHz 43dBm 82dBc 20MHz, 20MHz) 16-Lead 300MHz. LT6402-12 LT6411 LT6402 OIP310M OIP320M OIP325M LTC17XX LTC22xx LC-B-B

    M/A-COM TOP PART MARKING QFN

    Abstract: OIP310M L 0706 lter marking LT6402 OIP320M OIP325M
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise:


    Original     		PDF LT6402-12 300MHz 43dBm 82dBc 20MHz, 20MHz) 16-Lead 300MHz. LT6402-12 150mW M/A-COM TOP PART MARKING QFN OIP310M L 0706 lter marking LT6402 OIP320M OIP325M

    AP209

    Abstract: 50-3000MHz sot89 mmic 25 mmic C4 sot 89 PFL3 AP-209
    Text: MMIC AP209 Product Features Applications • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


    Original     		PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209 50-3000MHz sot89 mmic 25 mmic C4 sot 89 PFL3 AP-209

    Untitled

    Abstract: No abstract text available
    Text: TGA2533-SM Ku-Band Power Amplifier Applications •  Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features          Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB


    Original     		PDF TGA2533-SM 43dBm TGA2533-SM 43dBm 20dBm

    B0725

    Abstract: JESD22-A114 RO4003 TGA2533-SM
    Text: TGA2533-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features • • • • • • • • • Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB


    Original     		PDF TGA2533-SM 43dBm TGA2533-SM 43dBm 20dBm B0725 JESD22-A114 RO4003

    16l soic8

    Abstract: qfn16 thermal resistance
    Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


    Original     		PDF ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor CA2875R trw rf hybrid amp TRW amplifier
    Text: RF Devices Division TRW Electronic Components Group CA2875R CA2875R Thin Film RF Linear Hybrid Amplifier • Wide Dynamic Range: +43dBm Third Order Intercept • Excellent Match at Input/Output: Lowest VSWR • Low Noise Figure Push-pull Cascode Circuit


    OCR Scan     		PDF CA2875R CA2875R 43dBm -32dB trw RF POWER TRANSISTOR trw rf transistor trw rf hybrid amp TRW amplifier

    SMM-280-2

    Abstract: No abstract text available
    Text: SMM-280-2 1.5-2.7 GHz, 2 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 33dBm Output Power - High Third Order Intercept, +43dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package Description Stanford Microdevices' SMM-280-2 is a high performance


    OCR Scan     		PDF SMM-280-2 33dBm 43dBm 1800mA 500mW

    Untitled

    Abstract: No abstract text available
    Text: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package


    OCR Scan     		PDF SHF-0500 33dBm 43dBm F-500 450mA)