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    Anytek Technology Corporation Ltd YK3310303000G

    CONN BARRIER STRIP 3CIRC 0.325"
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    DigiKey YK3310303000G Bulk 1,584 1
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    Anytek Technology Corporation Ltd YK3310403000G

    CONN BARRIER STRIP 4CIRC 0.325"
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    DigiKey YK3310403000G Bulk 1,569 1
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    Anytek Technology Corporation Ltd YK3310203000G

    CONN BARRIER STRIP 2CIRC 0.325"
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    DigiKey YK3310203000G Bulk 1,285 1
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    On-Shore Technology Inc OSTYK33102030

    CONN BARRIER STRIP 2CIRC 0.325"
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    DigiKey OSTYK33102030 Bulk 833 1
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    On-Shore Technology Inc OSTYK33104030

    CONN BARRIER STRIP 4CIRC 0.325"
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    DigiKey OSTYK33104030 Bulk 104 1
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    K3310 Datasheets (1)

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    K3310 CUI K3310 - 31.5 x 10 mm Knob, Set Screw Style; Material: ABS Plastic; Knob diam (mm): 33.00000; Knob diam (in): 1.30 Original PDF

    K3310 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: REV. A DESCRIPTION NEW DRAWING DATE 4/28/2008 set screw 20050 SW 112th Ave. Tualatin, OR 97062 Phone: 503-612-2300 800-275-4899 Fax: 503-612-2383 Website: www.cui.com TITLE: COPYRIGHT 2008 BY CUI INC. Model Number K3310 K3310-BLACK K3310-AG Color Options taupe


    Original     		112th K3310 K3310-BLACK K3310-AG PDF

    2SK3310

    Abstract: No abstract text available
    Text: K3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3310 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3310 2SK3310 PDF

    2SK3310

    Abstract: K3310
    Text: K3310 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3310 単位: mm ○ スイッチングレギュレータ用 • : RDS (ON) = 0.48 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.3 S (標準)


    Original     		2SK3310 SC-67 2-10R1B 2SK3310 K3310 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3310 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3310 PDF

    2SK3310

    Abstract: No abstract text available
    Text: K3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3310 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3310 2SK3310 PDF

    2SK3310

    Abstract: 40W10 MSA10
    Text: K3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3310 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) · High forward transfer admittance: |Yfs| = 4.3 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3310 2SK3310 40W10 MSA10 PDF

    2SK3310

    Abstract: No abstract text available
    Text: K3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3310 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3310 2SK3310 PDF