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    2SK217 Price and Stock

    Rochester Electronics LLC 2SK2170-TL-E

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2170-TL-E Bulk 2,219
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    • 10000 $0.14
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    Rochester Electronics LLC 2SK2171-5-TD-E

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2171-5-TD-E Bulk 683
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    SANYO Semiconductor Co Ltd 2SK2171-5-TD

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2171-5-TD 120
    • 1 $3.604
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    onsemi 2SK2170-TL-E

    2SK2170 - N-Channel J-FET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK2170-TL-E 105,000 1
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    onsemi 2SK2171-5-TD-E

    2SK2171 - N-Channel J-FET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK2171-5-TD-E 5,000 1
    • 1 $0.4225
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    • 100 $0.3972
    • 1000 $0.3591
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    Find more 2SK217 price and stock on Findchips.com

    2SK217 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK217 Hitachi Semiconductor Silicon N-Channel Junction FET Original PDF
    2SK217 Renesas Technology Original PDF
    2SK217 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK217 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK217 Unknown FET Data Book Scan PDF
    2SK2170 Sanyo Semiconductor TRANS JFET N-CH 30V 4A 3SMCP Original PDF
    2SK2170 Sanyo Semiconductor Impedance converters Original PDF
    2SK2170 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2170 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK2170 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK2170 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    2sk2171 Sanyo Semiconductor N-channel junction silicon FET, high-frequency, low-noise amp analog switch application Original PDF
    2SK2171 Sanyo Semiconductor High-Frequency, Low-Frequency Amplifier Analog Swi Original PDF
    2SK2171 Sanyo Semiconductor N-Channel Junction Silicon FET Original PDF
    2SK2171 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK2171 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2171 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK2171 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK2171 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK21713 Sanyo Semiconductor TRANS JFET N-CH 40V 52A 3PCP Original PDF

    2SK217 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK2177 F1E50VX2) PDF

    2SK2171

    Abstract: No abstract text available
    Text: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.


    Original     		ENN4871 2SK2171 2SK2171] 25max 2SK2171 PDF

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240 PDF

    2SK2175

    Abstract: Hitachi DSA001652
    Text: 2SK2175 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter


    Original     		2SK2175 O-220AB 2SK2175 Hitachi DSA001652 PDF

    K2173

    Abstract: K217 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance


    Original     		2SK2173 K2173 K217 2SK2173 PDF

    2SK2177

    Abstract: F1E50VX2 F1E5
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 1A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		2SK2177 F1E50VX2) Avalanche177 2SK2177 F1E50VX2 F1E5 PDF

    K2173

    Abstract: 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original     		2SK2173 K2173 2SK2173 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2179 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)9.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55þ


    Original     		2SK2179 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK2178 F2E50VX2) PDF

    2SK2179

    Abstract: F3E50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK2179 F3E50VX2) 2SK2179 F3E50VX2 PDF

    MM2124

    Abstract: 2SK2170
    Text: Ordering number:ENN4858 N-Channel Junction Silicon FET 2SK2170 Impedance Converter Applications Applications Package Dimensions • Low-frequency amplifier, analog switch, constant current source. unit:mm 2124 [2SK2170] · Ultrasmall-sized package permitting 2SK2170applied sets to be made small and slim.


    Original     		ENN4858 2SK2170 2SK2170] 2SK2170applied MM2124 2SK2170 PDF

    2SK2178

    Abstract: F2E50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK2178 F2E50VX2) 2SK2178 F2E50VX2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original     		2SK2173 PDF

    2SK2171

    Abstract: No abstract text available
    Text: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.


    Original     		ENN4871 2SK2171 2SK2171] 25max 2SK2171 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2174 L , 2SK2174(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2174(L), 2SK2174(S)


    OCR Scan     		2SK2174 D-85622 PDF

    2SK2261

    Abstract: 2SK1973 2SK1974 2SK1975 2SK1976 2SK2094 2SK2095 2SK2104 2SK2176 2SK2262
    Text: POWER MÜSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference 'N / ceo [V] 60 450 500 2SK2176 T0-220FP


    OCR Scan     		2SK1973 2SK2094 2SK2261 2SK2262 2SK2104 2SK1976 T0-220FP) 2SK2176 2SK1974 2SK2261 2SK1973 2SK1974 2SK1975 2SK1976 2SK2094 2SK2095 2SK2104 2SK2176 2SK2262 PDF

    2SK217

    Abstract: No abstract text available
    Text: 2SK217 Silicon N-Channel Junction FET HITACHI Application VHF amplifier Outline MPAK 4 P r, 2 1020 1. Gate 2. Drain 3. Source 2SK217 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain current VGDO -3 0 V Drain current lD 20 mA Gate current


    OCR Scan     		2SK217 2SK217 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SK217 '*» r H A fíN e . J U .^ C f IC.JN « Î •r M j n , -t i m 0 i ' ÌM Û ■ • 5 t i 'Î '\ U = v . J . •/> * ? : $MPAK.I » A Û S O I U T Ë M A X IM U M f t A T t l t O S ^ n , - ^ > X iM U H C M A N N C L P O W G ft í.ü li


    OCR Scan     		2SK217 PDF

    2SK2177

    Abstract: No abstract text available
    Text: Power MOSFET msmmm E-pack SMD TO-220 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics (max) C«, (typ) (typ) t«, (typ) (typ) [pF] [pF] [ns] [ns] R d S(ON) Type No. Tch V dss Vgss Id Pt re ] [V ] [V ] [A ] [W ] [Q ] totf 2SK2177


    OCR Scan     		2SK2177 O-220 O-220 STO-220 FTO-220 PDF

    wps1

    Abstract: transistor Sh 550
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SHIBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L 2-tt-M O SV (2SK2173) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		2SK2173 2SK2173) 13mil 100/j 2SK2173 wps1 transistor Sh 550 PDF

    2SK217

    Abstract: pbml NL JH
    Text: HITACHI 2SK217 I-i c;> lAhKf-:. í jf.ii'Æ: f Vm F M jn L irir"i T T «I • 1 . . *> p4Ü I -.0- ! lit tliilü « . l» i • ■ 1 V .H o n I. C « Ï. fr: i ^“-'"iT 1 .1 -. j- i IA H S L U IE - H A X IIIU M Wa TIHÜS ■r. -.y, . Ib -n . C i n t i ’ .i


    OCR Scan     		2SK217 2SK217 pbml NL JH PDF

    ens100

    Abstract: 71ra
    Text: VX-DvU-X /ffeMOSFET V X -n SERIES P0 H 4 MOSFET O U T L IN E D IM E N S IO N S Case I E-pack 2SK2177 F 1 E 5 0 V X 2 6.6 ±0 2 2.55 - 0.2 500V 1A 0. 5 t 0 1 0.5 0 .6 * ° 2 U ± 0 .2 [Unit '•mm] k O i t o P12, 7 - l £ c * i i < £ S i > „ Lead type is available. S e e P. 12, 7-1


    OCR Scan     		2SK2177 300fi F1E50VX2) ens100 71ra PDF

    Untitled

    Abstract: No abstract text available
    Text: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C


    OCR Scan     		2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 PDF

    2SK2176

    Abstract: k2176
    Text: h7 > V 2SK2176 £ /Transistors 2S K 2176 '> • ;= ]> N MOS Silicon N-channel MOSFET > ^/Switching • ^fJKvl'jiEI/Dimenslons U nit: mm « * 1) 2) S i Ü X ' f ■ ;= } - > '? 7 , f ~ K„ 3) E l ' SOAo 4) fr - V • v -x « E o V g ss = ± 3 0 V < *E E


    OCR Scan     		2SK2176 2SK2176 k2176 PDF