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    2SK2939 Search Results

    2SK2939 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2939STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 26Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    2SK2939 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2939 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2939 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2939L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939L Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 35; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.032; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff ( us) typ: 0.175; Package: LDPAK (L) Original PDF
    2SK2939L Renesas Technology High Speed Power Amplifier, 60V 35A 50W, MOS-FET N-Channel enhanced Original PDF
    2SK2939L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2939S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2939S Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 35; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.032; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff ( us) typ: 0.175; Package: LDPAK (S)- (1) Original PDF
    2SK2939STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK2939 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2939

    Abstract: Hitachi DSA00238 PWC20
    Text: 2SK2939 L ,2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


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    2SK2939 ADE-208-562D Hitachi DSA00238 PWC20 PDF

    2SK2939

    Abstract: Hitachi DSA00117
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition June 1, 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original
    2SK2939 ADE-208-562D Aval005-1897 D-85622 Hitachi DSA00117 PDF

    2SK2939

    Abstract: Hitachi DSA0044
    Text: 2SK2939 L ,2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Mar. 2001 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original
    2SK2939 ADE-208-562D Hitachi DSA0044 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original
    2SK2939 ADE-208-562 Hitachi DSA002780 PDF

    2SK2939

    Abstract: 2SK2939L-E 2SK2939STL-E PRSS0004AE-A
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1053-0600 (Previous: ADE-208-562D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original
    2SK2939 REJ03G1053-0600 ADE-208-562D) PRSS0004AE-A PRSS0004AE-B 2SK2939L-E 2SK2939STL-E PRSS0004AE-A PDF

    2SK2939

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original
    HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original
    2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    2SK2939

    Abstract: 2SK2939L-E 2SK2939STL-E PRSS0004AE-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original
    HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original
    3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-562 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.020 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source


    OCR Scan
    2SK2939 ADE-208-562 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-562D (Z) 5th. Edition June 1, 1998 Features • Low on-resistance Rds =0.020 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source


    OCR Scan
    2SK2939 ADE-208-562D 2SK2939Ã D-85622 PDF

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan
    2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151 PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan
    2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan
    2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729 PDF

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


    OCR Scan
    2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent PDF