Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

2SK2149

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2149 Unit in mm Silicon N Channel MOSType c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-D C Converter and Motor Drive Applications. • Low Drain-Source ON Resistance: läs(ON) = 0.6i2 (Typ.)

2SK2145

Contextual Info: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0

2SK2146

Abstract: H1 SOT-89
Contextual Info: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

2SK213 2Sk214

Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance

2SK2146

Contextual Info: TOSHIBA 2SK2146 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 2 1 46 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SJ76

Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting

2SK2148

Contextual Info: 2SK2148-01R N-channel MOS-FET FAP-IIA Series 600V > Features - 0,75Ω 12A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2144

Abstract: dc-dc converter hitachi HITACHI DIODE 2SK1572 DSA003639
Contextual Info: 2SK2144 Silicon N-Channel MOS FET ADE-208-1349 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

Contextual Info: 2SK2144 Silicon N-Channel MOS FET HITACHI Application H ig h speed p o w e r sw itc hin g Features • L o w o n -resistan ce • H igh sp eed sw itc h in g • L o w d riv e curren t • N o S e c o n d a ry B re a k d o w n • S u itable fo r S w itc h in g regulator, D C - D C c o n v e rte r

2SK2145

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

REJ03G0122-0200

Abstract: 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 Previous: ADE-208-1179 Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T 2SK2141 is N -c h a n n e l P ower M O S H eld Effect T ra n s is ­ in millimeters to r de s ig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s.

Hitachi DSA002781

Contextual Info: 2SK2144 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline 2SK2144 Absolute Maximum Ratings Ta = 25°C

2SK2144

Abstract: 2SK1572
Contextual Info: 2SK2144 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 2 12 1

UC200

Contextual Info: 2SK2144 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on—resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Table 1 A bsolute M axim um R atings Ta = 25 ° C

2SJ76

Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

hitachi j79

Abstract: 2SK216 2SK215 j78 transistor 2SJ76 2SK213 2SK214 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

2SK2145

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

K2140

Abstract: 2sk2140 TC-2513
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140,2SK2140-Z is N-channel Power MOS Field Effect PACKAGE DIMENSIONS in millimeters Transistor designed for high voltage switching applications.

2SK2148

Abstract: 2SK2148-01R
Contextual Info: 2SK2148-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications ±0.3 3.2 +0.3 ±0.3 5.45 ±0.2 5.45 ±0.2 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 20 Min High speed switching