parallel MOSFET Transistors

Abstract: 2SK2459N 200v 5A mosfet 2SK245 mosfet 200v mosfet mosfet 5a Transistors
Contextual Info: Transistors Switching 200V, 5A 2SK2459N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

2SK245

Abstract: 10C3 251C 2SK2459N CL05 2SK2459
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V g ss = ±30V. 5) Easily designed drive circuits.

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

Contextual Info: 2SK2459 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)

Contextual Info: Transistors Switching 200V, 5A 2SK2459N • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce vo lta g e gu a ra n te e d at V gss = ± 3 0 V . 5) Easily designed drive circuits.

2SK2452

Abstract: 2SK245-2
Contextual Info: 2SK245-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)125þ I(GSS) Max. (A)2n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

mosfet ftr 03

Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vqss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

2SK2459

Abstract: 2SK2459N
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) G ate-source voltage guaranteed at Voss = ± 3 0 V . 5) Easily designed drive circuits.

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SK2296

Abstract: 2sk2450 K2460 2SK2295 22BW
Contextual Info: POWER M ÜSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2295

Abstract: 2SK2294 2SK2460 2SK2176 2SK2430 2SK2429 2SK2293 2sk2298 2SK2104 transistor 2sk
Contextual Info: POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2295

Abstract: 2SK2460 2SK2459 2SK2299
Contextual Info: POWER MQSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placem ent. 2. MOSFETs operating from 4 volts These M OSFETs can be directly driven by an IC, saving counts of components buffer transistors